Low-temperature contribution to the resonant tunneling conductance of a disordered N–I–N junction

• Published in: JETP letters 2016-10, Vol.104 (7), p.500-503
• Main Authors: Kirpichenkov, V. Ya, Kirpichenkova, N. V., Lozin, O. I., Postnikov, A. A.
• Format: Article
• Language: English
• Subjects: Atomic; Biological and Medical Physics; Biophysics; Fermi surfaces; Impurities; Low temperature; Miscellaneous; Molecular; Optical and Plasma Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Quantum Information Technology; Resonant tunneling; Semiconductor junctions; Shores; Solid State Physics; Spintronics; Temperature dependence
• ISSN: 0021-3640; 1090-6487
• DOI: 10.1134/S002136401619005X

A formula for the contribution Δ G res ( T ) to the resonant tunneling conductance of the N–I–N junction (where N is a normal metal and I is an insulator) with a weak (low impurity concentrations) structural disorder in the I layer from the low-temperature “smearing” electron Fermi surfaces in its N shores is obtained. It is shown that the temperature dependence Δ G res ( T ) in such a “dirty” junction qualitatively differs from the corresponding dependence Δ G 0 ( T ) in a “pure” (without resonant impurities in the I layer) junction: Δ G res ( T ) < 0, d (Δ G res )/ dT < 0; Δ G 0 ( T ) > 0, d (Δ G 0 )/ dT > 0, which can serve as an experimental test of the presence of impurity tunneling resonances in the disordered I layer.