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Recombination in converters of β-radiation energy to electrical energy
β-to-electric energy converters based on high-ohmic silicon, as well as processes that provide a high conversion efficiency, have been studied. It has been shown that the conversion efficiency is related to recombination in the space-charge region of converters at low levels of injection. A techniqu...
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Published in: | Technical physics 2016-12, Vol.61 (12), p.1838-1843 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | β-to-electric energy converters based on high-ohmic silicon, as well as processes that provide a high conversion efficiency, have been studied. It has been shown that the conversion efficiency is related to recombination in the space-charge region of converters at low levels of injection. A technique for determining the parameters of recombination centers that is built on new conversion algorithms has been developed. These algorithms make it possible to change the monotonic (and exponential as a whole) current–voltage characteristic of the device to a singular curve and find the parameters of recombination centers. These parameters have been calculated in a wide temperature range. Regions in the temperature–forward bias coordinates have been revealed in which recombination fluxes are captured by a recombination center, which influences the saturation current of the current–voltage characteristic and the conversion efficiency. |
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ISSN: | 1063-7842 1090-6525 |
DOI: | 10.1134/S1063784216120021 |