Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas

A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The...

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Bibliographic Details
Published in:Technical physics letters 2016-11, Vol.42 (11), p.1061-1063
Main Authors: Vendik, O. G., Vendik, I. B., Tural’chuk, P. A., Parnes, Ya. M., Parnes, M. D.
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Gallium nitrides
Physics
Physics and Astronomy
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Summary:A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785016110110