Competition between band and hopping carrier transport in Ge : Mn thin films

Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationles...

Full description

Saved in:
Bibliographic Details
Published in:Physics of the solid state 2017-03, Vol.59 (3), p.538-542
Main Authors: Dmitriev, A. I., Buravov, L. I.
Format: Article
Language:English
Subjects:
Electric properties
Hopping conduction
Magnetic properties
Magnetism
Physics
Physics and Astronomy
Semiconductor industry
Semiconductors (Materials)
Solid State Physics
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.
ISSN:1063-7834
1090-6460
DOI:10.1134/S106378341703009X