Competition between band and hopping carrier transport in Ge : Mn thin films

Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationles...

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Published in:Physics of the solid state 2017-03, Vol.59 (3), p.538-542
Main Authors: Dmitriev, A. I., Buravov, L. I.
Format: Article
Language:English
Subjects:
Electric properties
Hopping conduction
Magnetic properties
Magnetism
Physics
Physics and Astronomy
Semiconductor industry
Semiconductors (Materials)
Solid State Physics
Thin films
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cited_by cdi_FETCH-LOGICAL-c389t-cecba0882bc36789c31129ecb0a776897b46c75efccab69f14cd5de06b5178153
cites cdi_FETCH-LOGICAL-c389t-cecba0882bc36789c31129ecb0a776897b46c75efccab69f14cd5de06b5178153
container_end_page 542
container_issue 3
container_start_page 538
container_title Physics of the solid state
container_volume 59
creator Dmitriev, A. I.
Buravov, L. I.
description Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.
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fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_1881493069</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A498129514</galeid><sourcerecordid>A498129514</sourcerecordid><originalsourceid>FETCH-LOGICAL-c389t-cecba0882bc36789c31129ecb0a776897b46c75efccab69f14cd5de06b5178153</originalsourceid><addsrcrecordid>eNp1kU1LAzEQhhdR8PMHeAt48rA10-xmE2-l-FGoCH6At5BNZ2ukTdYkRf33ptSDRSQMM5k8b-aFKYpToAMAVl08AuWsEayChjJK5ctOcQBU0pJXnO6ua87K9ft-cRjjG6UAUMuDYjr2yx6TTdY70mL6QMxZuxlZx6vve-vmxOgQLAaSgnax9yER68gNkkty50h6zZfOLpbxuNjr9CLiyU8-Kp6vr57Gt-X0_mYyHk1Lw4RMpUHTairEsDWMN0IaBjCUuUl103Ahm7bipqmxM0a3XHZQmVk9Q8rbGhoBNTsqzjb_9sG_rzAm9eZXweWRCoSASjLKZaYGG2quF6is63y2b_KZ4dIa7zB7RjWqpMjTa6iy4HxLkJmEn2muVzGqyePDNgsb1gQfY8BO9cEudfhSQNV6I-rPRrJmuNHEzLo5hl-2_xV9Aw00i0k</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1881493069</pqid></control><display><type>article</type><title>Competition between band and hopping carrier transport in Ge : Mn thin films</title><source>Springer Link</source><creator>Dmitriev, A. I. ; Buravov, L. I.</creator><creatorcontrib>Dmitriev, A. I. ; Buravov, L. I.</creatorcontrib><description>Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T &gt; 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S106378341703009X</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Electric properties ; Hopping conduction ; Magnetic properties ; Magnetism ; Physics ; Physics and Astronomy ; Semiconductor industry ; Semiconductors (Materials) ; Solid State Physics ; Thin films</subject><ispartof>Physics of the solid state, 2017-03, Vol.59 (3), p.538-542</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>COPYRIGHT 2017 Springer</rights><rights>Copyright Springer Science &amp; Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-cecba0882bc36789c31129ecb0a776897b46c75efccab69f14cd5de06b5178153</citedby><cites>FETCH-LOGICAL-c389t-cecba0882bc36789c31129ecb0a776897b46c75efccab69f14cd5de06b5178153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Dmitriev, A. I.</creatorcontrib><creatorcontrib>Buravov, L. I.</creatorcontrib><title>Competition between band and hopping carrier transport in Ge : Mn thin films</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T &gt; 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.</description><subject>Electric properties</subject><subject>Hopping conduction</subject><subject>Magnetic properties</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Semiconductor industry</subject><subject>Semiconductors (Materials)</subject><subject>Solid State Physics</subject><subject>Thin films</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kU1LAzEQhhdR8PMHeAt48rA10-xmE2-l-FGoCH6At5BNZ2ukTdYkRf33ptSDRSQMM5k8b-aFKYpToAMAVl08AuWsEayChjJK5ctOcQBU0pJXnO6ua87K9ft-cRjjG6UAUMuDYjr2yx6TTdY70mL6QMxZuxlZx6vve-vmxOgQLAaSgnax9yER68gNkkty50h6zZfOLpbxuNjr9CLiyU8-Kp6vr57Gt-X0_mYyHk1Lw4RMpUHTairEsDWMN0IaBjCUuUl103Ahm7bipqmxM0a3XHZQmVk9Q8rbGhoBNTsqzjb_9sG_rzAm9eZXweWRCoSASjLKZaYGG2quF6is63y2b_KZ4dIa7zB7RjWqpMjTa6iy4HxLkJmEn2muVzGqyePDNgsb1gQfY8BO9cEudfhSQNV6I-rPRrJmuNHEzLo5hl-2_xV9Aw00i0k</recordid><startdate>20170301</startdate><enddate>20170301</enddate><creator>Dmitriev, A. I.</creator><creator>Buravov, L. I.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20170301</creationdate><title>Competition between band and hopping carrier transport in Ge : Mn thin films</title><author>Dmitriev, A. I. ; Buravov, L. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-cecba0882bc36789c31129ecb0a776897b46c75efccab69f14cd5de06b5178153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Electric properties</topic><topic>Hopping conduction</topic><topic>Magnetic properties</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Semiconductor industry</topic><topic>Semiconductors (Materials)</topic><topic>Solid State Physics</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dmitriev, A. I.</creatorcontrib><creatorcontrib>Buravov, L. I.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dmitriev, A. I.</au><au>Buravov, L. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Competition between band and hopping carrier transport in Ge : Mn thin films</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2017-03-01</date><risdate>2017</risdate><volume>59</volume><issue>3</issue><spage>538</spage><epage>542</epage><pages>538-542</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T &gt; 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S106378341703009X</doi><tpages>5</tpages></addata></record>
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subjects Electric properties
Hopping conduction
Magnetic properties
Magnetism
Physics
Physics and Astronomy
Semiconductor industry
Semiconductors (Materials)
Solid State Physics
Thin films
title Competition between band and hopping carrier transport in Ge : Mn thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T17%3A46%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Competition%20between%20band%20and%20hopping%20carrier%20transport%20in%20Ge%20:%20Mn%20thin%20films&rft.jtitle=Physics%20of%20the%20solid%20state&rft.au=Dmitriev,%20A.%20I.&rft.date=2017-03-01&rft.volume=59&rft.issue=3&rft.spage=538&rft.epage=542&rft.pages=538-542&rft.issn=1063-7834&rft.eissn=1090-6460&rft_id=info:doi/10.1134/S106378341703009X&rft_dat=%3Cgale_proqu%3EA498129514%3C/gale_proqu%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c389t-cecba0882bc36789c31129ecb0a776897b46c75efccab69f14cd5de06b5178153%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1881493069&rft_id=info:pmid/&rft_galeid=A498129514&rfr_iscdi=true