Topologically protected ac transport in zigzag silicene nanosystem

The linear ac transport properties are investigated theoretically in zigzag silicene nanoribbon and nanojunction systems. Based on the tight-binding approach and ac response theory, we compute the dc conductance and ac emittance. The topologically protected edge states and eliminated ac emittance ar...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2017-04, Vol.123 (4), p.1-7, Article 297
Main Authors: Ye, En-Jia, Sun, Yun-Lei, Yang, Guo-Feng, Chen, Guo-Qing
Format: Article
Language:English
Subjects:
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Emittance
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Resistance
Silicene
Surfaces and Interfaces
Thin Films
Transport properties
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Summary:The linear ac transport properties are investigated theoretically in zigzag silicene nanoribbon and nanojunction systems. Based on the tight-binding approach and ac response theory, we compute the dc conductance and ac emittance. The topologically protected edge states and eliminated ac emittance are presented around the Dirac point. Emittances as functions of the strength of spin-orbital interaction (SOI) and geometric size of the silicene systems are studied. The results show that the eliminated ac response behavior is induced by the strong SOI and is topologically protected against the size variation.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-017-0919-0