Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionalit...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-05, Vol.64 (5), p.1973-1980
Main Authors: Semple, James, Wyatt-Moon, Gwenhivir, Georgiadou, Dimitra G., McLachlan, Martyn A., Anthopoulos, Thomas D.
Format: Article
Language:English
Subjects:
Adhesion
Aluminum
Data storage
Electrodes
Electronics
Endurance
Fabrication
Flexible electronics
Lithography
Memory devices
Metals
nanogap electrodes
Nanoscale devices
Nonvolatile memory
Random access memory
resistive switching
Substrates
Switches
Switching
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Summary:Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10^{4} and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2638499