Effect of seed layer with low lead content on electrical properties of PZT thin films

Two-step crystallization process based on a low-Pb-content seed layer is proposed to form PZT films by the chemical solution deposition. The first crystallization step was performed after the deposition from precursor solutions with 0 and 5 wt% Pb excess, which provides a low nucleation rate and the...

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Bibliographic Details
Published in:Journal of materials research 2017-05, Vol.32 (9), p.1618-1627
Main Authors: Delimova, Liubov, Guschina, Ekaterina, Zaitseva, Nina, Pavlov, Sergey, Seregin, Dmitry, Vorotilov, Konstantin, Sigov, Alexander
Format: Article
Language:English
Subjects:
Annealing
Applied and Technical Physics
Biomaterials
Copper
Crystallization
Deposition
Electrical properties
Ferroelectrics
Inorganic Chemistry
Invited Feature Paper
Invited Feature Papers
Lead content
Lead zirconate titanates
Materials Engineering
Materials research
Materials Science
Microelectromechanical systems
Nanotechnology
Nucleation
Perovskites
Phase transitions
Polarization
Random access memory
Silicon wafers
Thin films
Transient current
Transistors
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Summary:Two-step crystallization process based on a low-Pb-content seed layer is proposed to form PZT films by the chemical solution deposition. The first crystallization step was performed after the deposition from precursor solutions with 0 and 5 wt% Pb excess, which provides a low nucleation rate and the strong perovskite (111) orientation. The bulk film was obtained from solutions with a 30 wt% Pb excess, which ensures a high growth rate and eliminates formation of pyrochlore residuals. Some films with a fixed Pb excess were prepared for comparison. It is shown that the low-Pb-content seed layer can sufficiently enhance the texture of perovskite (111) grains thus providing the highest polarization magnitudes as compared to films prepared with the fixed Pb content. The lead content and the crystallization of the seed layer are found to affect the grain-boundary conduction, which, in turn, influences the polarization dependence of transient currents.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2017.156