Origin of Room Temperature Ferromagnetism in Cr-Doped Lead-Free Ferroelectric Bi^sub 0.5^Na^sub 0.5^TiO3 Materials

The development of multiferroic materials based on lead-free ferroelectric material provides an opportunity to fabricate next-generation electronic devices. In this work, Cr-doped lead-free ferroelectric Bi0.5Na0.5TiO3 materials were synthesized by using the sol-gel method. The optical band gap was...

Full description

Saved in:
Bibliographic Details
Published in:Journal of electronic materials 2017-06, Vol.46 (6), p.3367
Main Authors: Thanh, L T, H, Doan, N B, Dung, N Q, Cuong, L V, Bac, L H, Duc, N A, Bao, P Q, Dung, D D
Format: Article
Language:English
Subjects:
Bismuth titanate
Chromium
Electronic devices
Ferroelectric materials
Ferroelectricity
Ferromagnetism
Lead free
Magnetic saturation
Multiferroic materials
Room temperature
Sol-gel processes
Titanium
Transition metals
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The development of multiferroic materials based on lead-free ferroelectric material provides an opportunity to fabricate next-generation electronic devices. In this work, Cr-doped lead-free ferroelectric Bi0.5Na0.5TiO3 materials were synthesized by using the sol-gel method. The optical band gap was reduced from 3.12 eV to 2.12 eV for undoped and 9 mol.% Cr-doped Bi0.5Na0.5TiO3 with the substitution of Cr at the Ti-site. Cr-doped Bi0.5Na0.5TiO3 materials exhibited weak ferromagnetism at room temperature. Saturation magnetization was approximately 0.08 [mu] B/Cr at 5 K. Our work will facilitate the further understanding of the role of transition metal ferromagnetism in lead-free ferroelectric materials at room temperature.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-016-5248-0