Characteristics of two-dimensional MoS2 films deposited using a reactive thermal evaporation method

In this study, we fabricated three- and four-molecule-thick two-dimensional (2-D) MoS 2 films using a reactive thermal evaporation method. The number of layers was estimated using optical transmittance. The MoS 2 films had a 1.89-eV direct band gap and 1.42∼1.45-eV indirect band gap. The band-gap en...

Full description

Saved in:
Bibliographic Details
Published in:Molecular Crystals and Liquid Crystals 2017-03, Vol.645 (1), p.193-198
Main Authors: Park, Tae-Kwang, Lee, Ho-Nyeon
Format: Article
Language:English
Subjects:
Band gap
Energy gap
Evaporation
Molybdenum disulfide
MoS
reactive thermal evaporation
Semiconductor devices
Thin film transistors
Thin films
two-dimensional
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, we fabricated three- and four-molecule-thick two-dimensional (2-D) MoS 2 films using a reactive thermal evaporation method. The number of layers was estimated using optical transmittance. The MoS 2 films had a 1.89-eV direct band gap and 1.42∼1.45-eV indirect band gap. The band-gap energy was estimated using the optical absorbance curves. The direct band gap transition dominated the MoS 2 films. The number of molecular layers in the 2-D MoS 2 films could be controlled relatively easily. The development of thin-film transistors using reactive thermally evaporated MoS 2 active layers is currently underway.
ISSN:1542-1406
1563-5287
1527-1943
DOI:10.1080/15421406.2016.1277647