Undoped and Doped Junctionless FETs: Source/Drain Contacts and Immunity to Random Dopant Fluctuation

By using numerical simulations, we demonstrate that a proper source/drain contacting strategy not only boosts the on-currents, but also eliminates random dopant fluctuation (RDF) of a junctionless FET (JLFET). Two contacting strategies for JLFETs with a wide range of doping concentration (10^{10} \s...

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Bibliographic Details
Published in:IEEE electron device letters 2017-06, Vol.38 (6), p.708-711
Main Authors: Chen, Liang-Yu, Hsieh, Yu-Feng, Kao, Kuo-Hsing
Format: Article
Language:English
Subjects:
Computer simulation
Contacts
dopantless
Dopants
Doping
dopingless
Immunity
Insulators
junctionless
Logic gates
metal-insulator-semiconductor (MIS) contact
MIS (semiconductors)
random dopant fluctuation
Schottky barriers
Silicon
Tunneling
Variation
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Summary:By using numerical simulations, we demonstrate that a proper source/drain contacting strategy not only boosts the on-currents, but also eliminates random dopant fluctuation (RDF) of a junctionless FET (JLFET). Two contacting strategies for JLFETs with a wide range of doping concentration (10^{10} \sim ~10^{20} cm^{-3}) are compared and discussed: metal-insulator-semiconductor (MIS) and metal-semiconductor (MS) contacts. The Schottky barrier at the MS contact shows more negative impacts on the on-current when the JLFET is not doped heavily. With dopantless and unintentionally doped Si (doping concentration = 10^{10} \sim ~10^{17} cm^{-3} for both n-type dopants and p-type dopants), the JLFETs with MIS contacts may exhibit higher on-currents than those with MS contacts and show almost the same transfer characteristics. The later result actually implies that the JLFET with MIS contacts possesses the immunity against RDF.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2690993