Porous Quaternary Al0.1In0.1Ga0.8N Film Formation via Photoelectrochemical Etching in HF:C2H5OH Electrolyte

Pore formation in AlInGaN films using photoelectrochemical etching in different volume ratios of hydrofluoric acid:ethanol solution (1:1, 1:2, 1:3, and 1:4) has been investigated structurally, morphologically, and optically. A significant increase in root mean square roughness and photoluminescence...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2016-07, Vol.99 (7), p.2395-2401
Main Authors: Lim, Way Foong, Quah, Hock Jin, Hassan, Zainuriah, Radzali, Rosfariza, Zainal, Norzaini, Yam, Fong Kwong
Format: Article
Language:English
Subjects:
Axial stress
Chemical engineering
Dislocation density
Electrolytes
etchants/etching
Etching
Ethanol
Hydrofluoric acid
Light emitting diodes
Mean square values
nitrides
optical materials/properties
Photochemistry
Photoluminescence
Pore formation
Pore size
Porosity
Roughness
Stress relaxation
Thin films
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Summary:Pore formation in AlInGaN films using photoelectrochemical etching in different volume ratios of hydrofluoric acid:ethanol solution (1:1, 1:2, 1:3, and 1:4) has been investigated structurally, morphologically, and optically. A significant increase in root mean square roughness and photoluminescence intensity in AlInGaN film etched in 1:1 solution has yielded the highest pore density and the largest average pore size in the film. Moreover, the acquisition of the lowest total dislocation density as well as the largest in‐plane biaxial stress relaxation in the film suggested potential use of the porous film as a template to grow subsequent layers for development of light‐emitting diodes.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.14241