P‐57: Back‐channel Contamination Induced Amorphous Silicon TFT Deterioration during Manufacturing Process

Back‐channel contamination induced amorphous silicon TFT deterioration is found to cause V‐crosstalk failure during reliability test. An additive used in photoresist stripping process is linked to this phenomenon, and effective solutions in the aspect of process and material are verified by experime...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1460-1462
Main Authors: Xiong, Yuan, Wu, Yue, Xie, HuaFei, Jiang, ChunSheng
Format: Article
Language:English
Subjects:
Amorphous silicon
back-channel
Contamination
Crosstalk
Deterioration
Failure
Photo-leakage current
Reliability
Silicon wafers
stripper
Stripping
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Summary:Back‐channel contamination induced amorphous silicon TFT deterioration is found to cause V‐crosstalk failure during reliability test. An additive used in photoresist stripping process is linked to this phenomenon, and effective solutions in the aspect of process and material are verified by experiments and measurements.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11919