P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O

The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon”...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1227-1230
Main Authors: Nakata, Mitsuru, Ochi, Mototaka, Tsuji, Hiroshi, Takei, Tatsuya, Miyakawa, Masashi, Fujisaki, Yoshihide, Goto, Hiroshi, Kugimiya, Toshihiro, Yamamoto, Toshihiro
Format: Article
Language:English
Subjects:
Diffusion annealing
Diffusion layers
Etching
Hydrogen
hydrogen diffusion
In-Ga-Sn-O
oxide semiconductor
Passivity
Reduction
Semiconductor devices
short channel
Thin film transistors
thin-film transistor
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Summary:The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon” to reduce the effective channel length in IGTO thin‐film transistors with a SiNx /SiOx passivation layer by the partial formation of a low‐resistance region in the IGTO film. The method is experimentally validated, and we show that even shorter channel lengths can be achieved by employing a SiNx /SiOx layer as an etch‐stop layer.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11870