P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O

The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon”...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1227-1230
Main Authors: Nakata, Mitsuru, Ochi, Mototaka, Tsuji, Hiroshi, Takei, Tatsuya, Miyakawa, Masashi, Fujisaki, Yoshihide, Goto, Hiroshi, Kugimiya, Toshihiro, Yamamoto, Toshihiro
Format: Article
Language:English
Subjects:
Diffusion annealing
Diffusion layers
Etching
Hydrogen
hydrogen diffusion
In-Ga-Sn-O
oxide semiconductor
Passivity
Reduction
Semiconductor devices
short channel
Thin film transistors
thin-film transistor
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c2120-e1cbfb03c6f0799746fc385d40f3e81bd1471c119992436f0cf06f9f5d8641313
cites cdi_FETCH-LOGICAL-c2120-e1cbfb03c6f0799746fc385d40f3e81bd1471c119992436f0cf06f9f5d8641313
container_end_page 1230
container_issue 1
container_start_page 1227
container_title SID International Symposium Digest of technical papers
container_volume 48
creator Nakata, Mitsuru
Ochi, Mototaka
Tsuji, Hiroshi
Takei, Tatsuya
Miyakawa, Masashi
Fujisaki, Yoshihide
Goto, Hiroshi
Kugimiya, Toshihiro
Yamamoto, Toshihiro
description The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon” to reduce the effective channel length in IGTO thin‐film transistors with a SiNx /SiOx passivation layer by the partial formation of a low‐resistance region in the IGTO film. The method is experimentally validated, and we show that even shorter channel lengths can be achieved by employing a SiNx /SiOx layer as an etch‐stop layer.
doi_str_mv 10.1002/sdtp.11870
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1904785773</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1904785773</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2120-e1cbfb03c6f0799746fc385d40f3e81bd1471c119992436f0cf06f9f5d8641313</originalsourceid><addsrcrecordid>eNp9kM1Kw0AUhQdRsFY3PsGAOyF1biZ_406qrYVCS5uCu5BMZsyUdFJnErSufASf0Sdx2rp2cX_gfPdcOAhdAxkAIf6dLdvtACCJyQnq-RAlHoGQnaIeISz2WBS9nKMLa9eEUBoErIe6-c_XN9zjUV4YxfNWNRo3Eud4WTWmddqwyrUWNZ59qFLgdJTiVatq9an0K24rgRfCKtvmmgsHL0TZ8YPHvBK62bjSWGk80U4c564t99vsEp3JvLbi6m_20Wr0lA6fvelsPBk-TD3ug088AbyQBaE8kiRmLA4iyWkSlgGRVCRQlBDEwAEYY35AHcQliSSTYZlEAVCgfXRz9N2a5q0Tts3WTWe0e5kBI0GchHFMHXV7pLhprDVCZlujNrnZZUCyfazZPtbsEKuD4Qi_q1rs_iGz5WM6P978Agi1fzo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1904785773</pqid></control><display><type>article</type><title>P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O</title><source>Wiley</source><creator>Nakata, Mitsuru ; Ochi, Mototaka ; Tsuji, Hiroshi ; Takei, Tatsuya ; Miyakawa, Masashi ; Fujisaki, Yoshihide ; Goto, Hiroshi ; Kugimiya, Toshihiro ; Yamamoto, Toshihiro</creator><creatorcontrib>Nakata, Mitsuru ; Ochi, Mototaka ; Tsuji, Hiroshi ; Takei, Tatsuya ; Miyakawa, Masashi ; Fujisaki, Yoshihide ; Goto, Hiroshi ; Kugimiya, Toshihiro ; Yamamoto, Toshihiro</creatorcontrib><description>The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon” to reduce the effective channel length in IGTO thin‐film transistors with a SiNx /SiOx passivation layer by the partial formation of a low‐resistance region in the IGTO film. The method is experimentally validated, and we show that even shorter channel lengths can be achieved by employing a SiNx /SiOx layer as an etch‐stop layer.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.11870</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>Diffusion annealing ; Diffusion layers ; Etching ; Hydrogen ; hydrogen diffusion ; In-Ga-Sn-O ; oxide semiconductor ; Passivity ; Reduction ; Semiconductor devices ; short channel ; Thin film transistors ; thin-film transistor</subject><ispartof>SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1227-1230</ispartof><rights>2017 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2120-e1cbfb03c6f0799746fc385d40f3e81bd1471c119992436f0cf06f9f5d8641313</citedby><cites>FETCH-LOGICAL-c2120-e1cbfb03c6f0799746fc385d40f3e81bd1471c119992436f0cf06f9f5d8641313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Nakata, Mitsuru</creatorcontrib><creatorcontrib>Ochi, Mototaka</creatorcontrib><creatorcontrib>Tsuji, Hiroshi</creatorcontrib><creatorcontrib>Takei, Tatsuya</creatorcontrib><creatorcontrib>Miyakawa, Masashi</creatorcontrib><creatorcontrib>Fujisaki, Yoshihide</creatorcontrib><creatorcontrib>Goto, Hiroshi</creatorcontrib><creatorcontrib>Kugimiya, Toshihiro</creatorcontrib><creatorcontrib>Yamamoto, Toshihiro</creatorcontrib><title>P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O</title><title>SID International Symposium Digest of technical papers</title><description>The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon” to reduce the effective channel length in IGTO thin‐film transistors with a SiNx /SiOx passivation layer by the partial formation of a low‐resistance region in the IGTO film. The method is experimentally validated, and we show that even shorter channel lengths can be achieved by employing a SiNx /SiOx layer as an etch‐stop layer.</description><subject>Diffusion annealing</subject><subject>Diffusion layers</subject><subject>Etching</subject><subject>Hydrogen</subject><subject>hydrogen diffusion</subject><subject>In-Ga-Sn-O</subject><subject>oxide semiconductor</subject><subject>Passivity</subject><subject>Reduction</subject><subject>Semiconductor devices</subject><subject>short channel</subject><subject>Thin film transistors</subject><subject>thin-film transistor</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kM1Kw0AUhQdRsFY3PsGAOyF1biZ_406qrYVCS5uCu5BMZsyUdFJnErSufASf0Sdx2rp2cX_gfPdcOAhdAxkAIf6dLdvtACCJyQnq-RAlHoGQnaIeISz2WBS9nKMLa9eEUBoErIe6-c_XN9zjUV4YxfNWNRo3Eud4WTWmddqwyrUWNZ59qFLgdJTiVatq9an0K24rgRfCKtvmmgsHL0TZ8YPHvBK62bjSWGk80U4c564t99vsEp3JvLbi6m_20Wr0lA6fvelsPBk-TD3ug088AbyQBaE8kiRmLA4iyWkSlgGRVCRQlBDEwAEYY35AHcQliSSTYZlEAVCgfXRz9N2a5q0Tts3WTWe0e5kBI0GchHFMHXV7pLhprDVCZlujNrnZZUCyfazZPtbsEKuD4Qi_q1rs_iGz5WM6P978Agi1fzo</recordid><startdate>201705</startdate><enddate>201705</enddate><creator>Nakata, Mitsuru</creator><creator>Ochi, Mototaka</creator><creator>Tsuji, Hiroshi</creator><creator>Takei, Tatsuya</creator><creator>Miyakawa, Masashi</creator><creator>Fujisaki, Yoshihide</creator><creator>Goto, Hiroshi</creator><creator>Kugimiya, Toshihiro</creator><creator>Yamamoto, Toshihiro</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201705</creationdate><title>P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O</title><author>Nakata, Mitsuru ; Ochi, Mototaka ; Tsuji, Hiroshi ; Takei, Tatsuya ; Miyakawa, Masashi ; Fujisaki, Yoshihide ; Goto, Hiroshi ; Kugimiya, Toshihiro ; Yamamoto, Toshihiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2120-e1cbfb03c6f0799746fc385d40f3e81bd1471c119992436f0cf06f9f5d8641313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Diffusion annealing</topic><topic>Diffusion layers</topic><topic>Etching</topic><topic>Hydrogen</topic><topic>hydrogen diffusion</topic><topic>In-Ga-Sn-O</topic><topic>oxide semiconductor</topic><topic>Passivity</topic><topic>Reduction</topic><topic>Semiconductor devices</topic><topic>short channel</topic><topic>Thin film transistors</topic><topic>thin-film transistor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakata, Mitsuru</creatorcontrib><creatorcontrib>Ochi, Mototaka</creatorcontrib><creatorcontrib>Tsuji, Hiroshi</creatorcontrib><creatorcontrib>Takei, Tatsuya</creatorcontrib><creatorcontrib>Miyakawa, Masashi</creatorcontrib><creatorcontrib>Fujisaki, Yoshihide</creatorcontrib><creatorcontrib>Goto, Hiroshi</creatorcontrib><creatorcontrib>Kugimiya, Toshihiro</creatorcontrib><creatorcontrib>Yamamoto, Toshihiro</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakata, Mitsuru</au><au>Ochi, Mototaka</au><au>Tsuji, Hiroshi</au><au>Takei, Tatsuya</au><au>Miyakawa, Masashi</au><au>Fujisaki, Yoshihide</au><au>Goto, Hiroshi</au><au>Kugimiya, Toshihiro</au><au>Yamamoto, Toshihiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2017-05</date><risdate>2017</risdate><volume>48</volume><issue>1</issue><spage>1227</spage><epage>1230</epage><pages>1227-1230</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon” to reduce the effective channel length in IGTO thin‐film transistors with a SiNx /SiOx passivation layer by the partial formation of a low‐resistance region in the IGTO film. The method is experimentally validated, and we show that even shorter channel lengths can be achieved by employing a SiNx /SiOx layer as an etch‐stop layer.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.11870</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0097-966X
ispartof SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1227-1230
issn 0097-966X
2168-0159
language eng
recordid cdi_proquest_journals_1904785773
source Wiley
subjects Diffusion annealing
Diffusion layers
Etching
Hydrogen
hydrogen diffusion
In-Ga-Sn-O
oxide semiconductor
Passivity
Reduction
Semiconductor devices
short channel
Thin film transistors
thin-film transistor
title P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T15%3A27%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=P%E2%80%901:%20Fabrication%20of%20a%20Short%E2%80%90Channel%20Oxide%20TFT%20Utilizing%20the%20Resistance%E2%80%90Reduction%20Phenomenon%20in%20In%E2%80%90Ga%E2%80%90Sn%E2%80%90O&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Nakata,%20Mitsuru&rft.date=2017-05&rft.volume=48&rft.issue=1&rft.spage=1227&rft.epage=1230&rft.pages=1227-1230&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.11870&rft_dat=%3Cproquest_cross%3E1904785773%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c2120-e1cbfb03c6f0799746fc385d40f3e81bd1471c119992436f0cf06f9f5d8641313%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1904785773&rft_id=info:pmid/&rfr_iscdi=true