P‐10: High‐Density Plasma Sputtered InZnSnO Thin‐Film Transistors Fabricated by Back Channel Etching Method on Flexible Polyimide Substrate

We demonstrate the fabrication of high performance InZnSnO thin‐film transistors (TFT) with the field‐effect mobility of 25 cm2/Vs on about 10 um‐thin polyimide substrate. Back‐channel etch (BCE) process in the bottom gate configuration is employed for easy implementation of devices with shorter cha...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1262-1264
Main Authors: Cho, Sung Haeng, Kim, Hee-Ok, Park, Eun-Suk, Kwon, Oh-Sang, Yang, Jong-Heon, Hwang, Chi-Sun, Lee, Jeong-Rak, Do, Jae-Chul, Park, Wan-Woo, Roh, Yong-Suk
Format: Article
Language:English
Subjects:
Back Channel Etch Process
Capacitance
Density
Deposition
Etching
Flexible
High Density Plasma Sputtering
Oxide semiconductors
Plasmas (physics)
Polyimide substrate
Semiconductor devices
Sputtering
Thin film transistors
Transistors
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Summary:We demonstrate the fabrication of high performance InZnSnO thin‐film transistors (TFT) with the field‐effect mobility of 25 cm2/Vs on about 10 um‐thin polyimide substrate. Back‐channel etch (BCE) process in the bottom gate configuration is employed for easy implementation of devices with shorter channel length and smaller parasitic capacitance and cost‐effective fabrication compared with devices with etch‐stop layer (ESL). For highly uniform electrical characteristics with high field‐effect mobility, InZnSnO are deposited by high density plasma (HDP) sputtering which is assisted by microwave in order to enable the thin‐film more densified compared with conventional sputtering method. The combination of HDP sputtering method for oxide deposition and BCE process provides highly uniform electrical characteristics of TFTs with high mobility and cost‐effective method for their fabrication in large area flexible substrate.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11860