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P‐24: A Novel Method to Improve the LTPS Devices on Flexible Substrate by Off‐state Bias Stress
This paper reports the effect of off‐state stress on the LTPS TFTs on plastic substrates. In this study, by giving LTPS devices off‐state bias stress one millisecond, it could get an excellent off‐state current from 50 pA to 2pA when device operate at VGS=+7V, VDS=‐5.1V. This could be attributed to...
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Published in: | SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1315-1317 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This paper reports the effect of off‐state stress on the LTPS TFTs on plastic substrates. In this study, by giving LTPS devices off‐state bias stress one millisecond, it could get an excellent off‐state current from 50 pA to 2pA when device operate at VGS=+7V, VDS=‐5.1V. This could be attributed to electron trapping occur in gate insulator could reduce off‐state electric field near to drain region. |
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ISSN: | 0097-966X 2168-0159 |
DOI: | 10.1002/sdtp.11889 |