76‐2: Field‐Effect Transistor with CAAC/CAC‐OS Double‐Layer Structure for Diversion of Gen 8‐10.5 Amorphous Silicon Production Lines

Using an active layer in which a c‐axis‐aligned crystalline oxide semiconductor (CAAC‐OS) is stacked on a cloud‐aligned composite OS (CAC‐OS), we have succeeded in fabricating a channel‐etched field‐effect transistor (CE‐FET) with a high on‐state current and favorable reliability. The CE‐FET with th...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1112-1115
Main Authors: Okazaki, Kenichi, Shima, Yukinori, Kurosaki, Daisuke, Nakazawa, Yasutaka, Koezuka, Junichi, Baba, Haruyuki, Yamazaki, Shunpei
Format: Article
Language:English
Subjects:
8K4K
Alignment
Amorphous silicon
Amorphous structure
Bypasses
CAAC
CAC
Crystal structure
Etching
Field effect transistors
Glass substrates
High mobility: CAAC/CAC double layer
Low cost
OS-FET
Photovoltaic cells
Production lines
Reliability engineering
Semiconductor devices
Silicon wafers
Structural reliability
Transistors
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Summary:Using an active layer in which a c‐axis‐aligned crystalline oxide semiconductor (CAAC‐OS) is stacked on a cloud‐aligned composite OS (CAC‐OS), we have succeeded in fabricating a channel‐etched field‐effect transistor (CE‐FET) with a high on‐state current and favorable reliability. The CE‐FET with the CAAC/CAC‐OS structure can be fabricated using the existing amorphous silicon facilities and processes almost as they are. Therefore, we believe that high‐performance devices can be fabricated at low cost with large Gen 8‐10.5 glass substrates.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11829