P‐13: Quantitative Analysis and Deconvolution of Subgap States in Amorphous In‐Ga‐Zn‐O

Amorphous In‐Ga‐Zn‐O has several origins of subgap states, causing TFT instability. We report experimental evidences that desorption of weakly‐bonded oxygen and hydrogen treatments produce the electron traps above valence band maximum (VBM). Those have different spectrum shapes, which are characteri...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1273-1275
Main Authors: Ide, Keisuke, Kishida, Yosuke, Ueda, Shigenori, Ohashi, Naoki, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio
Format: Article
Language:English
Subjects:
Amorphous oxide semiconductors
Bonding strength
Deconvolution
Desorption
Electron traps
Hard X-ray photoelectron spectroscopy
Hydrogen
Indium gallium zinc oxide
Quantitative analysis
Subgap states
Subnanometer-size void
Valence band
Weakly-bonded oxygen
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Summary:Amorphous In‐Ga‐Zn‐O has several origins of subgap states, causing TFT instability. We report experimental evidences that desorption of weakly‐bonded oxygen and hydrogen treatments produce the electron traps above valence band maximum (VBM). Those have different spectrum shapes, which are characterized by their peak energies, 0.6–0.9, and 1.7 eV from VBM.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11865