P‐13: Quantitative Analysis and Deconvolution of Subgap States in Amorphous In‐Ga‐Zn‐O

Amorphous In‐Ga‐Zn‐O has several origins of subgap states, causing TFT instability. We report experimental evidences that desorption of weakly‐bonded oxygen and hydrogen treatments produce the electron traps above valence band maximum (VBM). Those have different spectrum shapes, which are characteri...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1273-1275
Main Authors: Ide, Keisuke, Kishida, Yosuke, Ueda, Shigenori, Ohashi, Naoki, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio
Format: Article
Language:English
Subjects:
Amorphous oxide semiconductors
Bonding strength
Deconvolution
Desorption
Electron traps
Hard X-ray photoelectron spectroscopy
Hydrogen
Indium gallium zinc oxide
Quantitative analysis
Subgap states
Subnanometer-size void
Valence band
Weakly-bonded oxygen
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c1465-90d7fe9d7413f6c499d24dc85b4f8f412b52bdfa1f54d13c45cded022a11c7d33
cites cdi_FETCH-LOGICAL-c1465-90d7fe9d7413f6c499d24dc85b4f8f412b52bdfa1f54d13c45cded022a11c7d33
container_end_page 1275
container_issue 1
container_start_page 1273
container_title SID International Symposium Digest of technical papers
container_volume 48
creator Ide, Keisuke
Kishida, Yosuke
Ueda, Shigenori
Ohashi, Naoki
Hiramatsu, Hidenori
Hosono, Hideo
Kamiya, Toshio
description Amorphous In‐Ga‐Zn‐O has several origins of subgap states, causing TFT instability. We report experimental evidences that desorption of weakly‐bonded oxygen and hydrogen treatments produce the electron traps above valence band maximum (VBM). Those have different spectrum shapes, which are characterized by their peak energies, 0.6–0.9, and 1.7 eV from VBM.
doi_str_mv 10.1002/sdtp.11865
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1904794870</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1904794870</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1465-90d7fe9d7413f6c499d24dc85b4f8f412b52bdfa1f54d13c45cded022a11c7d33</originalsourceid><addsrcrecordid>eNp9kMtKw0AUhgdRsFY3PsGAOyF1TjK5jLvS1lootNIK4sJhMhdNSTMxk1S68xF8Rp_E1Lh2c85ZfP8P50PoEsgACPFvnKrLAUAShUeo50OUeARCdox6hLDYY1H0dIrOnNsQEgSUsh56WX5_fkFwix8aUdRZLepsp_GwEPneZQ6LQuGxlrbY2bypM1tga_CqSV9FiVctrB3OCjzc2qp8s43Ds6Ktm4p2PB-uxTk6MSJ3-uJv99Hj3WQ9uvfmi-lsNJx7EmgUeoyo2GimYgqBiSRlTPlUySRMqUkMBT8N_VQZASakCgJJQ6m0Ir4vAGSsgqCPrrresrLvjXY139imar9wHBihMaNJTFrquqNkZZ2rtOFllW1FtedA-MEfP_jjv_5aGDr4I8v1_h-Sr8brZZf5AaP8dos</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1904794870</pqid></control><display><type>article</type><title>P‐13: Quantitative Analysis and Deconvolution of Subgap States in Amorphous In‐Ga‐Zn‐O</title><source>Wiley</source><creator>Ide, Keisuke ; Kishida, Yosuke ; Ueda, Shigenori ; Ohashi, Naoki ; Hiramatsu, Hidenori ; Hosono, Hideo ; Kamiya, Toshio</creator><creatorcontrib>Ide, Keisuke ; Kishida, Yosuke ; Ueda, Shigenori ; Ohashi, Naoki ; Hiramatsu, Hidenori ; Hosono, Hideo ; Kamiya, Toshio</creatorcontrib><description>Amorphous In‐Ga‐Zn‐O has several origins of subgap states, causing TFT instability. We report experimental evidences that desorption of weakly‐bonded oxygen and hydrogen treatments produce the electron traps above valence band maximum (VBM). Those have different spectrum shapes, which are characterized by their peak energies, 0.6–0.9, and 1.7 eV from VBM.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.11865</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>Amorphous oxide semiconductors ; Bonding strength ; Deconvolution ; Desorption ; Electron traps ; Hard X-ray photoelectron spectroscopy ; Hydrogen ; Indium gallium zinc oxide ; Quantitative analysis ; Subgap states ; Subnanometer-size void ; Valence band ; Weakly-bonded oxygen</subject><ispartof>SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1273-1275</ispartof><rights>2017 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1465-90d7fe9d7413f6c499d24dc85b4f8f412b52bdfa1f54d13c45cded022a11c7d33</citedby><cites>FETCH-LOGICAL-c1465-90d7fe9d7413f6c499d24dc85b4f8f412b52bdfa1f54d13c45cded022a11c7d33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ide, Keisuke</creatorcontrib><creatorcontrib>Kishida, Yosuke</creatorcontrib><creatorcontrib>Ueda, Shigenori</creatorcontrib><creatorcontrib>Ohashi, Naoki</creatorcontrib><creatorcontrib>Hiramatsu, Hidenori</creatorcontrib><creatorcontrib>Hosono, Hideo</creatorcontrib><creatorcontrib>Kamiya, Toshio</creatorcontrib><title>P‐13: Quantitative Analysis and Deconvolution of Subgap States in Amorphous In‐Ga‐Zn‐O</title><title>SID International Symposium Digest of technical papers</title><description>Amorphous In‐Ga‐Zn‐O has several origins of subgap states, causing TFT instability. We report experimental evidences that desorption of weakly‐bonded oxygen and hydrogen treatments produce the electron traps above valence band maximum (VBM). Those have different spectrum shapes, which are characterized by their peak energies, 0.6–0.9, and 1.7 eV from VBM.</description><subject>Amorphous oxide semiconductors</subject><subject>Bonding strength</subject><subject>Deconvolution</subject><subject>Desorption</subject><subject>Electron traps</subject><subject>Hard X-ray photoelectron spectroscopy</subject><subject>Hydrogen</subject><subject>Indium gallium zinc oxide</subject><subject>Quantitative analysis</subject><subject>Subgap states</subject><subject>Subnanometer-size void</subject><subject>Valence band</subject><subject>Weakly-bonded oxygen</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKw0AUhgdRsFY3PsGAOyF1TjK5jLvS1lootNIK4sJhMhdNSTMxk1S68xF8Rp_E1Lh2c85ZfP8P50PoEsgACPFvnKrLAUAShUeo50OUeARCdox6hLDYY1H0dIrOnNsQEgSUsh56WX5_fkFwix8aUdRZLepsp_GwEPneZQ6LQuGxlrbY2bypM1tga_CqSV9FiVctrB3OCjzc2qp8s43Ds6Ktm4p2PB-uxTk6MSJ3-uJv99Hj3WQ9uvfmi-lsNJx7EmgUeoyo2GimYgqBiSRlTPlUySRMqUkMBT8N_VQZASakCgJJQ6m0Ir4vAGSsgqCPrrresrLvjXY139imar9wHBihMaNJTFrquqNkZZ2rtOFllW1FtedA-MEfP_jjv_5aGDr4I8v1_h-Sr8brZZf5AaP8dos</recordid><startdate>201705</startdate><enddate>201705</enddate><creator>Ide, Keisuke</creator><creator>Kishida, Yosuke</creator><creator>Ueda, Shigenori</creator><creator>Ohashi, Naoki</creator><creator>Hiramatsu, Hidenori</creator><creator>Hosono, Hideo</creator><creator>Kamiya, Toshio</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201705</creationdate><title>P‐13: Quantitative Analysis and Deconvolution of Subgap States in Amorphous In‐Ga‐Zn‐O</title><author>Ide, Keisuke ; Kishida, Yosuke ; Ueda, Shigenori ; Ohashi, Naoki ; Hiramatsu, Hidenori ; Hosono, Hideo ; Kamiya, Toshio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1465-90d7fe9d7413f6c499d24dc85b4f8f412b52bdfa1f54d13c45cded022a11c7d33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Amorphous oxide semiconductors</topic><topic>Bonding strength</topic><topic>Deconvolution</topic><topic>Desorption</topic><topic>Electron traps</topic><topic>Hard X-ray photoelectron spectroscopy</topic><topic>Hydrogen</topic><topic>Indium gallium zinc oxide</topic><topic>Quantitative analysis</topic><topic>Subgap states</topic><topic>Subnanometer-size void</topic><topic>Valence band</topic><topic>Weakly-bonded oxygen</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ide, Keisuke</creatorcontrib><creatorcontrib>Kishida, Yosuke</creatorcontrib><creatorcontrib>Ueda, Shigenori</creatorcontrib><creatorcontrib>Ohashi, Naoki</creatorcontrib><creatorcontrib>Hiramatsu, Hidenori</creatorcontrib><creatorcontrib>Hosono, Hideo</creatorcontrib><creatorcontrib>Kamiya, Toshio</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ide, Keisuke</au><au>Kishida, Yosuke</au><au>Ueda, Shigenori</au><au>Ohashi, Naoki</au><au>Hiramatsu, Hidenori</au><au>Hosono, Hideo</au><au>Kamiya, Toshio</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P‐13: Quantitative Analysis and Deconvolution of Subgap States in Amorphous In‐Ga‐Zn‐O</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2017-05</date><risdate>2017</risdate><volume>48</volume><issue>1</issue><spage>1273</spage><epage>1275</epage><pages>1273-1275</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>Amorphous In‐Ga‐Zn‐O has several origins of subgap states, causing TFT instability. We report experimental evidences that desorption of weakly‐bonded oxygen and hydrogen treatments produce the electron traps above valence band maximum (VBM). Those have different spectrum shapes, which are characterized by their peak energies, 0.6–0.9, and 1.7 eV from VBM.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.11865</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0097-966X
ispartof SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1273-1275
issn 0097-966X
2168-0159
language eng
recordid cdi_proquest_journals_1904794870
source Wiley
subjects Amorphous oxide semiconductors
Bonding strength
Deconvolution
Desorption
Electron traps
Hard X-ray photoelectron spectroscopy
Hydrogen
Indium gallium zinc oxide
Quantitative analysis
Subgap states
Subnanometer-size void
Valence band
Weakly-bonded oxygen
title P‐13: Quantitative Analysis and Deconvolution of Subgap States in Amorphous In‐Ga‐Zn‐O
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T16%3A44%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=P%E2%80%9013:%20Quantitative%20Analysis%20and%20Deconvolution%20of%20Subgap%20States%20in%20Amorphous%20In%E2%80%90Ga%E2%80%90Zn%E2%80%90O&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Ide,%20Keisuke&rft.date=2017-05&rft.volume=48&rft.issue=1&rft.spage=1273&rft.epage=1275&rft.pages=1273-1275&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.11865&rft_dat=%3Cproquest_cross%3E1904794870%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1465-90d7fe9d7413f6c499d24dc85b4f8f412b52bdfa1f54d13c45cded022a11c7d33%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1904794870&rft_id=info:pmid/&rfr_iscdi=true