Thermal annealing effect on structural and optical properties of 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetrone (Ch-diisoQ) thin films

• Published in: Optical and quantum electronics 2017-07, Vol.49 (7), p.1-13, Article 240
• Main Authors: Qashou, Saleem I., Rashad, M., Darwish, A. A. A., Hanafy, T. A.
• Format: Article
• Language: English
• Subjects: Annealing; Anthrax; Band gap; Characterization and Evaluation of Materials; Computer Communication Networks; Dislocations; Dispersion; Electrical Engineering; Energy gap; Evaporation; Lasers; Mathematical analysis; Optical Devices; Optical properties; Optics; Permittivity; Photonics; Physics; Physics and Astronomy; Reflectance; Scanning electron microscopy; Thin films; Transmittance; X-ray diffraction
• ISSN: 0306-8919; 1572-817X
• DOI: 10.1007/s11082-017-1069-5

Thin films of 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetrone (Ch-diisoQ) were prepared by thermal evaporation technique. Structural properties of these (as-prepared and annealed at 373, 423, 473 and 523 K) films were determined by X-ray diffraction and scanning electron microscopy, which showed that the grain sizes increasing by the annealing effect. The transmittance and reflectance of all Ch-diisoQ thin films were measured in the range 200–2500 nm. Some optical constants such as optical band gap ( E g ), dispersion energy ( E d ), single oscillator energy ( E o ) and optical dielectric constant at a higher frequency ( ε ∞ ) were calculated at different annealing temperatures. The optical band gap of the samples is decreased with the increase of annealing temperatures due to the increasing of the π-dislocation. Finally, the values of the optical susceptibility, χ (3) , were found to be annealing dependence.