Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p–i–n Diode

• Published in: Journal of electronic materials 2017-07, Vol.46 (7), p.4590-4595
• Main Authors: Sertel, T., Ozen, Y., Tataroglu, A., Asar, T., Cetin, S. S., Ozcelik, S.
• Format: Article
• Language: English
• Subjects: Bias; Characterization and Evaluation of Materials; Chemistry and Materials Science; Compatibility; Contact resistance; Current voltage characteristics; Dilution; Diodes; Electric contacts; Electric potential; Electrical properties; Electronics and Microelectronics; Emission analysis; Instrumentation; Materials Science; Metallizing; Molecular beam epitaxy; Molecular structure; Multi Quantum Wells; Optical and Electronic Materials; PIN diodes; Silicon substrates; Solid State Physics; Thermionic emission
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-017-5460-6

In this study, the electrical properties of dilute nitride GaAsPN/GaPN multi-quantum well p – i – n diodes were investigated by using current–voltage ( I – V ) measurements at room temperature. The diode structure was grown on silicon (Si) (100) substrate misoriented by 4° towards the [110] direction using the molecular beam epitaxy technique, and ohmic contacts were formed on this structure by metallization process. The forward bias I – V characteristics of the diode were analyzed by the thermionic emission theory. Ideality factor ( n ), barrier height (Φ b ) and series resistance ( R s ), which are the main electrical parameters of diodes, were determined from I – V characteristic, Norde and Cheung methods. The obtained experimental results were compared with each other. From the I – V characteristic, the values of n and Φ b were found to be 2.86 eV and 0.69 eV, respectively. The barrier height values, which were obtained from the Norde function and I – V characteristic, were in good agreement with each other. It was also found that the values of series resistance determined from the Norde and Cheung functions were compatible with each other.