Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon

The presented results characterize nanoparticle formation in n-Si(100) samples implanted with 50-keV 64 Zn + ions (the dose is 5 × 10 16 cm ‒2 ) at room temperature followed by heat treatment in an oxygen or nitrogen atmosphere at temperatures of 400–900°C. Defects and zinc concentration profiles ar...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2017-05, Vol.11 (3), p.625-633
Main Authors: Privezentsev, V. V., Kulikauskas, V. S., Zatekin, V. V., Shcherbachev, K. D., Tabachkova, N. Yu, Eidelman, K. B., Ksenich, S. V., Batrakov, A. A.
Format: Article
Language:English
Subjects:
Alloys
Amorphous silicon
Annealing
Atomic force microscopy
Backscattering
Channeling
Chemistry and Materials Science
Crystal defects
Dispersion
Energy consumption
Energy transmission
Heat treatment
Implantation
Materials Science
Nanoparticles
Nitrogen
Oxygen
Radiation damage
Recrystallization
Single crystals
Spectroscopy
Surfaces and Interfaces
Thin Films
Topology
Zinc
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Summary:The presented results characterize nanoparticle formation in n-Si(100) samples implanted with 50-keV 64 Zn + ions (the dose is 5 × 10 16 cm ‒2 ) at room temperature followed by heat treatment in an oxygen or nitrogen atmosphere at temperatures of 400–900°C. Defects and zinc concentration profiles are investigated via the Rutherford backscattering spectroscopy with the help of the channeling technique, in which 1.7-MeV He+ ions are scattered at an angle of 110°. The silicon surface layer is visualized using a transmission electron microscope equipped with an energy-dispersive microanalyzer. The surface topology of the implanted and annealed samples is studied via atomic-force microscopy. The implantation process is accompanied by the formation of a 150-nm-thick amorphous Si surface layer containing Zn nanoparticles with an average size of 4 nm, below which a radiation-damaged layer 50 nm thick is generated. After 800°C annealing in an oxygen atmosphere, a recrystallized single-crystal silicon layer with a complex ZnO/Zn 2 SiO 4 phase is formed. After 800°C annealing in a nitrogen atmosphere, a recrystallized polycrystalline Si layer involving Zn nanoparticles is created.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451017030326