Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage

We report on the structure and performance of 4H-SiC p + -n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm 2 at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 10 5 was measured at 94-V reverse bias, confirming the avalanch...

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Bibliographic Details
Published in:IEEE sensors journal 2017-07, Vol.17 (14), p.4460-4465
Main Authors: Sciuto, A., Mazzillo, M., Lenzi, P., Di Franco, S., Mello, D., Barbarino, P. P., Longo, G., Cascino, S., Santangelo, A., Albergo, S., Tricomi, A., Starodubtsev, O., Adriani, O., D'Arrigo, G.
Format: Article
Language:English
Subjects:
4H-SiC
APD photodiodes
Avalanche diodes
Avalanche photodiodes
Bias
Breakdown
Current density
Current measurement
Dark current
Detectors
Electric potential
Epitaxial layers
ion implantation
Multiplication
Optical devices
planar technology
Repair & maintenance
shallow junction
Temperature measurement
UV detectors
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Summary:We report on the structure and performance of 4H-SiC p + -n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm 2 at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 10 5 was measured at 94-V reverse bias, confirming the avalanche multiplication working condition. The maximum responsivity value was measured at 270 nm, increasing from 0.06 A/W (QE = 29%) at 0-V bias to 0.10 A/W (QE of about 45%) at 30-V reverse bias.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2017.2711643