Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration

The influence of surface carrier concentration on the ideality factor of excess base current (ΔI B ) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔI B in LPNP BJTs is impacted by the surface carrier density and radiation-induced interfa...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2017-06, Vol.64 (6), p.1549-1553
Main Authors: Xingji Li, Jianqun Yang, Barnaby, Hugh J., Galloway, Kenneth F., Schrimpf, Ronald D., Fleetwood, Daniel M., Chaoming Liu
Format: Article
Language:English
Subjects:
Bipolar junction transistor (BJT)
Carrier density
Current carriers
Current measurement
Electric potential
electron irradiation
Electron traps
ideality factor
interface traps
Irradiation
Junction transistors
Logic gates
Radiation
Radiation effects
Semiconductor devices
Spontaneous emission
Transistors
Voltage
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Summary:The influence of surface carrier concentration on the ideality factor of excess base current (ΔI B ) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔI B in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (V EB ) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2017.2703310