Near Surface Changes Due to 700ￂ keV Si+ Irradiation of Titanium Silicon Carbide

The radiation damage response of Ti3SiC2 heated from 120°C to 850°C during 700 keV Si+ irradiation has been investigated. The samples were analyzed using glancing incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy, and scanning electron microscopy. For the sample...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2015-12, Vol.98 (12), p.4050
Main Authors: Qi, Qiang, Liu, Chaozhuo Z, King, Bruce V, O'Connor, Daryl J, Kisi, Erich H, Wang, Kung, Shi, Liqun Q
Format: Article
Language:English
Subjects:
Backscattering
Incidence
Irradiation
Microstrain
Radiation damage
Raman spectroscopy
Scanning electron microscopy
Spectrometry
Spectroscopic analysis
Titanium
Titanium silicon carbide
X-ray diffraction
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Summary:The radiation damage response of Ti3SiC2 heated from 120°C to 850°C during 700 keV Si+ irradiation has been investigated. The samples were analyzed using glancing incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy, and scanning electron microscopy. For the sample at 120°C, irradiation results in a buildup of a heterogeneous surface and the formation of TiCx. Irradiation at 200°C results in maximum microstrain, a maximum in the c lattice parameter, and the appearance of a [beta] phase in addition to the normal [alpha] phase of Ti3SiC2. A minimum in the observed damage level near the surface was seen for irradiation at a sample temperature of 300°C but the damaged phase increases at higher temperatures. Differences between the present work and a previous C irradiation study have been ascribed to the enhanced Si defect transport at low temperatures.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.13793