Channel temperature measurement in hermetic packaged GaN HEMTs power switch using fast static and transient thermal methods

• Published in: Journal of thermal analysis and calorimetry 2017-08, Vol.129 (2), p.1159-1168
• Main Authors: Chen, Szu-Hao, Chou, Po-Chien, Cheng, Stone
• Format: Article
• Language: English
• Subjects: Analysis; Analytical Chemistry; Chemistry; Chemistry and Materials Science; Cooling; Cooling curves; Energy conversion efficiency; Excitation; Heat transfer; Heating; High electron mobility transistors; Impedance; Inorganic Chemistry; Knee; Liquor; Measurement; Measurement Science and Instrumentation; Methods; Nondestructive testing; Parameter sensitivity; Physical Chemistry; Polymer Sciences; Resistance; Semiconductor devices; Switches; Technology application; Temperature; Temperature measurement; Thermal resistance; Thermography; Threshold voltage
• ISSN: 1388-6150; 1588-2926
• DOI: 10.1007/s10973-017-6275-7

A GaN-based power device is a superior component for high-frequency and high-efficiency applications and especially for applications that involve megahertz power conversion. In this work, a fast process of static thermal resistance ( R th ) and transient thermal impedance ( Z th ) measurements are made and analyzed to determine the thermal characteristics of the channel temperature of a hermetically packaged GaN power device. Five temperature-sensitive parameters (TSPs) are measured at temperatures from 20 to 160 °C. Measurements and statistical analyses included variations with temperature of on-resistance ( R on ), saturation drain current ( I Dsat ), drain conductance ( g d ), threshold voltage ( V th ), and knee voltage ( V knee ). The statistical analyses revealed the relationships between the heating curve parameter ( R on ) and the cooling curve parameters ( V knee , I Dsat , g d , and V th ). The average thermal resistance values are extracted as follows: Maximum R th is 2.99 °C W −1 , minimum R th is 2.92 °C W −1 , and the variation among the five TSPs is