Analysis of boron in diamond with UV photoluminescence

Photoluminescence (PL) spectra of boron-doped diamonds at temperature 298 K were recorded with excitation in wavelength range 110–300 nm from a synchrotron source. A prominent emission feature was measured at 480.0 nm, corresponding to energy 2.535 eV; we detected also a distinct photoluminescence e...

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Bibliographic Details
Published in:Carbon (New York) 2017-01, Vol.111, p.835-838
Main Authors: Lu, Hsiao-Chi, Peng, Yu-Chain, Lin, Meng-Yeh, Chou, Sheng-Lung, Lo, Jen-Iu, Cheng, Bing-Ming
Format: Article
Language:English
Subjects:
Boron
Diamonds
Energy measurement
Excitation spectra
Nondestructive testing
Photoluminescence
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Summary:Photoluminescence (PL) spectra of boron-doped diamonds at temperature 298 K were recorded with excitation in wavelength range 110–300 nm from a synchrotron source. A prominent emission feature was measured at 480.0 nm, corresponding to energy 2.535 eV; we detected also a distinct photoluminescence excitation (PLE) band at 220.5 nm, 5.623 eV, for the first time. For sensitive analysis, the UV-PL technique provides a non-destructive method; we therefore recommend the use of UV-PL spectra excited in the region 200–230 nm to analyze boron dopant in diamonds. The least detectable concentration of the boron dopant is about 1 × 1016 atoms cm−3. Sensitive analysis of boron in diamond is achieved with photoluminescence excited in the region 200–230 nm. [Display omitted]
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2016.10.082