Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction

The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking i...

Full description

Saved in:
Bibliographic Details
Published in:Journal of communications technology & electronics 2017-06, Vol.62 (6), p.616-620
Main Authors: Paderov, V. P., Silkin, D. S., Goryachkin, Yu. V., Khapugin, A. A., Grishanin, A. V.
Format: Article
Language:English
Subjects:
Breakdown
Communications Engineering
Critical field (superconductivity)
Defects
Electric potential
Electrical equipment
Engineering
Hydrogen
Ionization
Networks
P-n junctions
Physical Processes in Electron Devices
Proton irradiation
Repair & maintenance
Silicon
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the p–n junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226917060158