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Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction
The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking i...
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Published in: | Journal of communications technology & electronics 2017-06, Vol.62 (6), p.616-620 |
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container_title | Journal of communications technology & electronics |
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creator | Paderov, V. P. Silkin, D. S. Goryachkin, Yu. V. Khapugin, A. A. Grishanin, A. V. |
description | The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage
p–n
junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated
p–n
junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the
p–n
junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed. |
doi_str_mv | 10.1134/S1064226917060158 |
format | article |
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p–n
junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated
p–n
junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the
p–n
junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.</description><identifier>ISSN: 1064-2269</identifier><identifier>EISSN: 1555-6557</identifier><identifier>DOI: 10.1134/S1064226917060158</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Breakdown ; Communications Engineering ; Critical field (superconductivity) ; Defects ; Electric potential ; Electrical equipment ; Engineering ; Hydrogen ; Ionization ; Networks ; P-n junctions ; Physical Processes in Electron Devices ; Proton irradiation ; Repair & maintenance ; Silicon</subject><ispartof>Journal of communications technology & electronics, 2017-06, Vol.62 (6), p.616-620</ispartof><rights>Pleiades Publishing, Inc. 2017</rights><rights>COPYRIGHT 2017 Springer</rights><rights>Journal of Communications Technology and Electronics is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c378t-bcc731e19dc5303df1b475ccdc4342371752bfa130add42dda5ea021b10f131e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/1917822758?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,776,780,11667,27901,27902,36037,44339</link.rule.ids></links><search><creatorcontrib>Paderov, V. P.</creatorcontrib><creatorcontrib>Silkin, D. S.</creatorcontrib><creatorcontrib>Goryachkin, Yu. V.</creatorcontrib><creatorcontrib>Khapugin, A. A.</creatorcontrib><creatorcontrib>Grishanin, A. V.</creatorcontrib><title>Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction</title><title>Journal of communications technology & electronics</title><addtitle>J. Commun. Technol. Electron</addtitle><description>The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage
p–n
junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated
p–n
junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the
p–n
junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.</description><subject>Breakdown</subject><subject>Communications Engineering</subject><subject>Critical field (superconductivity)</subject><subject>Defects</subject><subject>Electric potential</subject><subject>Electrical equipment</subject><subject>Engineering</subject><subject>Hydrogen</subject><subject>Ionization</subject><subject>Networks</subject><subject>P-n junctions</subject><subject>Physical Processes in Electron Devices</subject><subject>Proton irradiation</subject><subject>Repair & maintenance</subject><subject>Silicon</subject><issn>1064-2269</issn><issn>1555-6557</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>M0C</sourceid><recordid>eNp1kd9rFDEQx0NRaD39A3xb8ElwaybZbPYeS6ltoVCw6uuSzY-9XK_JmWTVvvV_8D_0L-kcW6GHSEJmmPl8k8kMIW-BHgPw5uMN0LZhrF2CpC0F0R2QIxBC1K0Q8gX6mK53-UPyKuc1pXzZUn5Evp05Z3Wpoqu2KZYYKp-SMl4Vjz7usrLVkKy6NfFnqH7ETVGj3eGqWvlxVf-NbP88_A7Vegp6p3xNXjq1yfbNk12Qr5_Ovpxe1FfX55enJ1e15rIr9aC15GBhabTglBsHQyOF1kY3vGFcghRscAo4VcY0zBglrKIMBqAOUMgX5N18Lxb_fbK59Os4pYBP9oCt6BiTokPqeKZGtbG9Dy6WpDQuY--8jsE6j_ETAR3ruMRCFuT9ngCZYn-VUU0595c3n_fZD8_YYco-2IxHxu6UPEv2cJhxnWLOybp-m_ydSvc90H43yv6fUaKGzZqMbBhtevbL_4oeAeVan0o</recordid><startdate>20170601</startdate><enddate>20170601</enddate><creator>Paderov, V. 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P.</au><au>Silkin, D. S.</au><au>Goryachkin, Yu. V.</au><au>Khapugin, A. A.</au><au>Grishanin, A. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction</atitle><jtitle>Journal of communications technology & electronics</jtitle><stitle>J. Commun. Technol. Electron</stitle><date>2017-06-01</date><risdate>2017</risdate><volume>62</volume><issue>6</issue><spage>616</spage><epage>620</epage><pages>616-620</pages><issn>1064-2269</issn><eissn>1555-6557</eissn><abstract>The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage
p–n
junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated
p–n
junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the
p–n
junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1064226917060158</doi><tpages>5</tpages></addata></record> |
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source | ABI/INFORM Global; Springer Nature:Jisc Collections:Springer Nature Read and Publish 2023-2025: Springer Reading List |
subjects | Breakdown Communications Engineering Critical field (superconductivity) Defects Electric potential Electrical equipment Engineering Hydrogen Ionization Networks P-n junctions Physical Processes in Electron Devices Proton irradiation Repair & maintenance Silicon |
title | Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction |
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