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Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction

The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking i...

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Published in:Journal of communications technology & electronics 2017-06, Vol.62 (6), p.616-620
Main Authors: Paderov, V. P., Silkin, D. S., Goryachkin, Yu. V., Khapugin, A. A., Grishanin, A. V.
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container_title Journal of communications technology & electronics
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creator Paderov, V. P.
Silkin, D. S.
Goryachkin, Yu. V.
Khapugin, A. A.
Grishanin, A. V.
description The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the p–n junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.
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subjects Breakdown
Communications Engineering
Critical field (superconductivity)
Defects
Electric potential
Electrical equipment
Engineering
Hydrogen
Ionization
Networks
P-n junctions
Physical Processes in Electron Devices
Proton irradiation
Repair & maintenance
Silicon
title Effect of proton irradiation on the breakdown voltage of a high-voltage p–n junction
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