A two-dimensional electron gas in donor–acceptor doped backward heterostructures

We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dim...

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Bibliographic Details
Published in:Technical physics letters 2017-06, Vol.43 (6), p.562-566
Main Authors: Pashkovskii, A. B., Novikov, S. I., Lapin, V. G., Lukashin, V. M.
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Construction standards
Electron gas
Gallium arsenide
Heterostructures
Hot electrons
Linearity
Measurement
Physics
Physics and Astronomy
Potential barriers
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Summary:We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dimensional quantization levels that is several times the optical phonon energy in GaAs and (ii) increased linearity of transfer characteristics.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785017060232