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Multi-Gate FinFET Mixer Variability Assessment Through Physics-Based Simulation

In this letter, we show that innovative physics-based simulations can be used for a comprehensive analysis of RF stages subject to random variations of technological parameters, including the computation of the average (deterministic) RF performance along with their statistical deviation. The variab...

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Bibliographic Details
Published in:IEEE electron device letters 2017-08, Vol.38 (8), p.1004-1007
Main Authors: Bughio, A. M., Guerrieri, S. Donati, Bonani, F., Ghione, G.
Format: Article
Language:English
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Summary:In this letter, we show that innovative physics-based simulations can be used for a comprehensive analysis of RF stages subject to random variations of technological parameters, including the computation of the average (deterministic) RF performance along with their statistical deviation. The variability analysis is addressed by means of the recently developed physics-based sensitivity analysis of AC parameters through Green's functions. To demonstrate the technique, we address the analysis of a FinFET mixer exploiting an innovative independent gates topology, showing that a careful design allows to maximize the mixer conversion gain, while minimizing its variability versus several physical parameters, such as the gate length, oxide thickness, and fin width.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2717460