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Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current
We present our latest results on cooled p -on- n planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current for raising the operating temperature ( T op ), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size. Both a...
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Published in: | Journal of electronic materials 2017-09, Vol.46 (9), p.5448-5457 |
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container_end_page | 5457 |
container_issue | 9 |
container_start_page | 5448 |
container_title | Journal of electronic materials |
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creator | Eich, D. Schirmacher, W. Hanna, S. Mahlein, K. M. Fries, P. Figgemeier, H. |
description | We present our latest results on cooled
p
-on-
n
planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current for raising the operating temperature (
T
op
), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size. Both are essential requirements to meet the market demands for reduced size, weight and power and high-operating temperature applications. Detectors based on the
p
-on-
n
technology developed at AIM now span the spectrum from the mid-wavelength infrared (MWIR) to the very long wavelength infrared (VLWIR) with cut-off wavelengths from 5
μ
m to about 13.5
μ
m at 80 K. The development of the
p
-on-
n
technology for VLWIR as well as for MWIR is mainly implemented in a planar photodetector design with a 20-
μ
m pixel pitch. For the VLWIR, dark currents significantly reduced as compared to ‘Tennant’s Rule 07’ are demonstrated for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at a 20 K higher operating temperature than with previous AIM technology. For MWIR detectors with a 20-
μ
m pitch, noise equivalent temperature differences of less than 30 mK are obtained up to 170 K. This technology has been transferred to our small pixel pitch high resolution (XGA) MWIR detector with 1024 × 768 pixels at a 10-
μ
m pitch. Excellent performance at an operating temperature of 160 K is demonstrated. |
doi_str_mv | 10.1007/s11664-017-5596-4 |
format | article |
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p
-on-
n
planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current for raising the operating temperature (
T
op
), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size. Both are essential requirements to meet the market demands for reduced size, weight and power and high-operating temperature applications. Detectors based on the
p
-on-
n
technology developed at AIM now span the spectrum from the mid-wavelength infrared (MWIR) to the very long wavelength infrared (VLWIR) with cut-off wavelengths from 5
μ
m to about 13.5
μ
m at 80 K. The development of the
p
-on-
n
technology for VLWIR as well as for MWIR is mainly implemented in a planar photodetector design with a 20-
μ
m pixel pitch. For the VLWIR, dark currents significantly reduced as compared to ‘Tennant’s Rule 07’ are demonstrated for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at a 20 K higher operating temperature than with previous AIM technology. For MWIR detectors with a 20-
μ
m pitch, noise equivalent temperature differences of less than 30 mK are obtained up to 170 K. This technology has been transferred to our small pixel pitch high resolution (XGA) MWIR detector with 1024 × 768 pixels at a 10-
μ
m pitch. Excellent performance at an operating temperature of 160 K is demonstrated.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-017-5596-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Dark current ; Detectors ; Electric currents ; Electronics and Microelectronics ; High resolution ; Infrared radiation ; Instrumentation ; Intermetallic compounds ; Markets ; Materials Science ; Mercury cadmium telluride ; Mercury cadmium tellurides ; Operating temperature ; Optical and Electronic Materials ; Pixels ; Sensors ; Solid State Physics ; Weight reduction</subject><ispartof>Journal of electronic materials, 2017-09, Vol.46 (9), p.5448-5457</ispartof><rights>The Minerals, Metals & Materials Society 2017</rights><rights>Journal of Electronic Materials is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-5a13b8fb281c378e530cd73c8af66c46b7d4c150b323386f51bd555da1df04563</citedby><cites>FETCH-LOGICAL-c316t-5a13b8fb281c378e530cd73c8af66c46b7d4c150b323386f51bd555da1df04563</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Eich, D.</creatorcontrib><creatorcontrib>Schirmacher, W.</creatorcontrib><creatorcontrib>Hanna, S.</creatorcontrib><creatorcontrib>Mahlein, K. M.</creatorcontrib><creatorcontrib>Fries, P.</creatorcontrib><creatorcontrib>Figgemeier, H.</creatorcontrib><title>Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>We present our latest results on cooled
p
-on-
n
planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current for raising the operating temperature (
T
op
), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size. Both are essential requirements to meet the market demands for reduced size, weight and power and high-operating temperature applications. Detectors based on the
p
-on-
n
technology developed at AIM now span the spectrum from the mid-wavelength infrared (MWIR) to the very long wavelength infrared (VLWIR) with cut-off wavelengths from 5
μ
m to about 13.5
μ
m at 80 K. The development of the
p
-on-
n
technology for VLWIR as well as for MWIR is mainly implemented in a planar photodetector design with a 20-
μ
m pixel pitch. For the VLWIR, dark currents significantly reduced as compared to ‘Tennant’s Rule 07’ are demonstrated for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at a 20 K higher operating temperature than with previous AIM technology. For MWIR detectors with a 20-
μ
m pitch, noise equivalent temperature differences of less than 30 mK are obtained up to 170 K. This technology has been transferred to our small pixel pitch high resolution (XGA) MWIR detector with 1024 × 768 pixels at a 10-
μ
m pitch. Excellent performance at an operating temperature of 160 K is demonstrated.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Dark current</subject><subject>Detectors</subject><subject>Electric currents</subject><subject>Electronics and Microelectronics</subject><subject>High resolution</subject><subject>Infrared radiation</subject><subject>Instrumentation</subject><subject>Intermetallic compounds</subject><subject>Markets</subject><subject>Materials Science</subject><subject>Mercury cadmium telluride</subject><subject>Mercury cadmium tellurides</subject><subject>Operating temperature</subject><subject>Optical and Electronic Materials</subject><subject>Pixels</subject><subject>Sensors</subject><subject>Solid State Physics</subject><subject>Weight reduction</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEUhYMoWKs_wF3AdTR38pjpskx9FFosOKK7kMlk-nA6qUlK6b93yrhw4-py4HznwofQLdB7oDR9CABSckIhJUKMJOFnaACCMwKZ_DxHA8okEJEwcYmuQthQCgIyGKCPhXdLb0PArsbzvMATG62JzuPCmlXrGrc8Yh3xeDrHhTtoXwX8ttVNYz1erKNZYd1WeOYOXZ5o_4Xzvfe2jdfootZNsDe_d4jenx6L_IXMXp-n-XhGDAMZidDAyqwukwwMSzMrGDVVykymaykNl2VacQOClixhLJO1gLISQlQaqppyIdkQ3fW7O---9zZEtXF733YvFYwSnlA6YrRrQd8y3oXgba12fr3V_qiAqpM_1ftTnT918qd4xyQ9E7puu7T-z_K_0A_aqnFP</recordid><startdate>20170901</startdate><enddate>20170901</enddate><creator>Eich, D.</creator><creator>Schirmacher, W.</creator><creator>Hanna, S.</creator><creator>Mahlein, K. M.</creator><creator>Fries, P.</creator><creator>Figgemeier, H.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20170901</creationdate><title>Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current</title><author>Eich, D. ; Schirmacher, W. ; Hanna, S. ; Mahlein, K. M. ; Fries, P. ; Figgemeier, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-5a13b8fb281c378e530cd73c8af66c46b7d4c150b323386f51bd555da1df04563</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Dark current</topic><topic>Detectors</topic><topic>Electric currents</topic><topic>Electronics and Microelectronics</topic><topic>High resolution</topic><topic>Infrared radiation</topic><topic>Instrumentation</topic><topic>Intermetallic compounds</topic><topic>Markets</topic><topic>Materials Science</topic><topic>Mercury cadmium telluride</topic><topic>Mercury cadmium tellurides</topic><topic>Operating temperature</topic><topic>Optical and Electronic Materials</topic><topic>Pixels</topic><topic>Sensors</topic><topic>Solid State Physics</topic><topic>Weight reduction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Eich, D.</creatorcontrib><creatorcontrib>Schirmacher, W.</creatorcontrib><creatorcontrib>Hanna, S.</creatorcontrib><creatorcontrib>Mahlein, K. M.</creatorcontrib><creatorcontrib>Fries, P.</creatorcontrib><creatorcontrib>Figgemeier, H.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>ProQuest research library</collection><collection>Science Journals (ProQuest Database)</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Eich, D.</au><au>Schirmacher, W.</au><au>Hanna, S.</au><au>Mahlein, K. M.</au><au>Fries, P.</au><au>Figgemeier, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2017-09-01</date><risdate>2017</risdate><volume>46</volume><issue>9</issue><spage>5448</spage><epage>5457</epage><pages>5448-5457</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>We present our latest results on cooled
p
-on-
n
planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current for raising the operating temperature (
T
op
), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size. Both are essential requirements to meet the market demands for reduced size, weight and power and high-operating temperature applications. Detectors based on the
p
-on-
n
technology developed at AIM now span the spectrum from the mid-wavelength infrared (MWIR) to the very long wavelength infrared (VLWIR) with cut-off wavelengths from 5
μ
m to about 13.5
μ
m at 80 K. The development of the
p
-on-
n
technology for VLWIR as well as for MWIR is mainly implemented in a planar photodetector design with a 20-
μ
m pixel pitch. For the VLWIR, dark currents significantly reduced as compared to ‘Tennant’s Rule 07’ are demonstrated for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at a 20 K higher operating temperature than with previous AIM technology. For MWIR detectors with a 20-
μ
m pitch, noise equivalent temperature differences of less than 30 mK are obtained up to 170 K. This technology has been transferred to our small pixel pitch high resolution (XGA) MWIR detector with 1024 × 768 pixels at a 10-
μ
m pitch. Excellent performance at an operating temperature of 160 K is demonstrated.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-017-5596-4</doi><tpages>10</tpages></addata></record> |
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language | eng |
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source | Springer Nature |
subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Dark current Detectors Electric currents Electronics and Microelectronics High resolution Infrared radiation Instrumentation Intermetallic compounds Markets Materials Science Mercury cadmium telluride Mercury cadmium tellurides Operating temperature Optical and Electronic Materials Pixels Sensors Solid State Physics Weight reduction |
title | Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current |
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