Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7...

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Bibliographic Details
Published in:Optoelectronics letters 2017-07, Vol.13 (4), p.241-244
Main Authors: Li, Kai-li, Zhang, Jia-shun, An, Jun-ming, Li, Jian-guang, Wang, Liang-liang, Wang, Yue, Wu, Yuan-da, Yin, Xiao-jie, Hu, Xiong-wei
Format: Article
Language:English
Subjects:
Crosstalk
Error analysis
Inductively coupled plasma
Insertion loss
Lasers
Lithography
Nanowires
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Plasma etching
Silicon substrates
Ultraviolet
Waveguides
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Description
Summary:A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of −13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon- on-insulator (SOI) substrate.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-017-7076-8