Effect of degenerate carriers on Si band gap narrowing

Various mechanisms causing band gap narrowing in strongly heated silicon are considered. In the high-temperature region, it becomes necessary to use Fermi–Dirac quantum statistics to describe carriers, since the silicon chemical potential appears in the valence band and in the conduction band at hig...

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Bibliographic Details
Published in:Bulletin of the Lebedev Physics Institute 2017-07, Vol.44 (7), p.198-201
Main Authors: Mazhukin, V. I., Koroleva, O. N., Mazhukin, A. V., Aleshchenko, Yu. A.
Format: Article
Language:English
Subjects:
Band gap
Carrier density
Chemical potential
Conduction bands
Physics
Physics and Astronomy
Quantum statistics
Silicon
Valence band
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Summary:Various mechanisms causing band gap narrowing in strongly heated silicon are considered. In the high-temperature region, it becomes necessary to use Fermi–Dirac quantum statistics to describe carriers, since the silicon chemical potential appears in the valence band and in the conduction band at high carrier concentrations. It is shown that carrier degeneracy under conditions of sufficiently strong heating of intrinsic semiconductor causes strong band gap narrowing. The obtained values of band gap narrowing are compared to experimental results.
ISSN:1068-3356
1934-838X
DOI:10.3103/S106833561707003X