Low cost high voltage GaN polarization superjunction field effect transistors

A comprehensive overview of the novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept, and a cost‐effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power swit...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2017-08, Vol.214 (8), p.1600834-n/a
Main Authors: Kawai, H., Yagi, S., Hirata, S., Nakamura, F., Saito, T., Kamiyama, Y., Yamamoto, M., Amano, H., Unni, V., Narayanan, E. M. S.
Format: Article
Language:English
Subjects:
Circuits
Electric potential
Field effect transistors
Gallium nitrides
GaN
Low cost
Polarization
Sapphire
Semiconductor devices
superjunctions
Switching
Transistors
two‐dimensional hole gases
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Summary:A comprehensive overview of the novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept, and a cost‐effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and the latest results of the scaled‐up PSJ‐FETs from POWDEC KK, are also discussed. The article also presents hard‐switching characteristics of 400–800 V boost converter, constructed using a PSJ‐FET grown on sapphire substrate, and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics. An overview of novel high‐voltage polarization superjunction (PSJ) technology platform in GaN materials system is presented here. With extremely competitive performance trade‐offs, PSJ devices are ideally suited for extreme operating conditions and can be used in space, aerospace, transportation, oil‐drilling, industrial as well as consumer applications. A sustainable route towards manufacturing of PSJ‐FETs, utilizing the existing and mature infrastructure for GaN LED production, is also discussed. With sapphire as the chosen substrate, PSJ is ideally suited for developing monolithic power integrated circuits which will be essential for practically realising high frequency power switching solutions using GaN.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201600834