Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters

The applications of a-InGaZnO thin-film transistors (TFTs) to logic circuits have been limited owing to the intrinsic n-channel operation. In this paper, we demonstrated a hybrid inverter constructed by p-channel low-temperature poly-silicon (LTPS) TFTs and n-channel amorphous-indium-gallium-zinc-ox...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-09, Vol.64 (9), p.3668-3671
Main Authors: ChangDong Chen, Bo-Ru Yang, Chuan Liu, Xing-Yu Zhou, Yuan-Jun Hsu, Yuan-Chun Wu, Jang-Soon Lm, Po-Yen Lu, Man Wong, Hoi-Sing Kwok, Shieh, Han-Ping D.
Format: Article
Language:English
Subjects:
a-InGaZnO
Circuit design
CMOS
Fabrication
Heat treatment
Hydrogen
hydrogenation
inverter
Inverters
Logic circuits
Logic gates
LTPS
Power consumption
Semiconductor devices
Silicon
Thin film transistors
thin-film transistors (TFTs)
Transistors
Voltage gain
Zinc oxide
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Summary:The applications of a-InGaZnO thin-film transistors (TFTs) to logic circuits have been limited owing to the intrinsic n-channel operation. In this paper, we demonstrated a hybrid inverter constructed by p-channel low-temperature poly-silicon (LTPS) TFTs and n-channel amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs. Hydrogenated LTPS TFTs and a-IGZO TFTs have been successfully fabricated on the same panel, followed by a rapid thermal annealing treatment to remove the hydrogens in the a-IGZO TFTs. The resulted hybrid inverter exhibits large noise margin closed to V DD /2 and a high voltage gain as 68.3. Due to the complementary configurations in the static state, the inverter shows small current and thus consumes low power in hundreds of picowatts. As all the fabrication processes are compatible with conventional techniques, the reported results may open new opportunities in circuit design and applications for oxide TFTs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2731205