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Effect of silicon powder content in starting materials on the phase and luminescence properties of SrSi2O2N2:Eu2+ phosphors
SrSi 2 O 2 N 2 :Eu 2+ phosphors were prepared by a high temperature solid-state reaction method from the Eu 2 O 3 –SrCO 3 –Si 3 N 4 –Si system. The phase characteristics and luminescence properties of the samples synthesized with various starting composition of silicon powder were investigated in de...
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Published in: | Journal of materials science. Materials in electronics 2017-09, Vol.28 (17), p.12551-12554 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | SrSi
2
O
2
N
2
:Eu
2+
phosphors were prepared by a high temperature solid-state reaction method from the Eu
2
O
3
–SrCO
3
–Si
3
N
4
–Si system. The phase characteristics and luminescence properties of the samples synthesized with various starting composition of silicon powder were investigated in detail by mean of X-ray diffraction and fluorescence spectrophotometer analysis. Single-phase SrSi
2
O
2
N
2
:Eu
2+
was successfully obtained avoiding the formation of an unknown phase, which usually exists from Eu
2
O
3
–SrCO
3
–Si
3
N
4
–SiO
2
system. The comparison of different composition of starting materials [Si:Si
3
N
4
= (1.5 +
x
)/3:(0.5−
x
) (
x
= 0, 0.1, 0.2, 0.3, 0.4, 0.5)] indicates that different silicon powder content in starting materials plays an crucial role in phase and luminescence properties of SrSi
2
O
2
N
2
. The XRD diffraction intensity ratio of nitrogen-rich phase/oxygen-rich phase is increasing regularly with increasing x values in different starting composition of Si:Si
3
N
4
= (1.5 +
x
)/3:(0.5−
x
) (
x
= 0, 0.1, 0.2, 0.3, 0.4, 0.5). The emission intensity of the samples is gently enhanced with the increasing Si:Si
3
N
4
. This demonstrates that the SiO originated in the reaction of Si and CO
2
is superior to SiO
2
for preparation of SrSi
2
O
2
N
2
:Eu
2+
. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-017-7078-0 |