Features of phase transformations in a Ni^sub V^-Pt-Si system during stationary stepped annealing

Electron diffraction methods in reflection geometry are used to investigate the distinctive features of phase transformations that occur in a NiV-Pt-Si system during stationary stepped annealing. A platinum film 0.015-0.02 µm thick and then a vanadium-alloyed nickel film 0.08 µm thick are magnetron-...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2015-11, Vol.79 (11), p.1360
Main Authors: Chaplanov, A M, Markevich, M I, Malyshko, A N, Shcherbakova, Ye N, Solodukha, V A, Turtsevich, A S, Solovyov, Ya A, Sarychev, O E
Format: Article
Language:English
Subjects:
Alloys
Annealing
Crystal lattices
Electron diffraction
Intermetallic compounds
Nickel base alloys
Nickel silicide
Phase transitions
Platinum
Silicides
Silicon
Silicon wafers
Stepped
Vanadium base alloys
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Summary:Electron diffraction methods in reflection geometry are used to investigate the distinctive features of phase transformations that occur in a NiV-Pt-Si system during stationary stepped annealing. A platinum film 0.015-0.02 µm thick and then a vanadium-alloyed nickel film 0.08 µm thick are magnetron-sputtered on the surface of a silicon wafer of KEF-0.5 grade with (111) orientation. Annealing is performed in a nitrogen atmosphere. It is shown that depending on the degree of homogenization of the mutual Ni-Pt solid solution and the interaction at the Pt-Si interface at the first step of annealing, which lasts for long periods of time at temperatures of 240 or 350°C, subsequent high-temperature annealing at 550°C for 30 min leads to the formation of Ni1-xPtxSi- or Pt1-xNixSi silicides with NiSi- or PtSi-type crystal lattices.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873815110052