Forming extremely small gaps in metal nanowires and studying their properties

A method for forming extremely small gaps (1–5 nm) in planar metallic nanowires for a new generation of nanoelectronic elements is developed using the electromigration effect. The dynamics of forming such gaps and their electrical characteristics are studied.

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2014-02, Vol.78 (2), p.139-143
Main Authors: Dagesyan, S. A., Soldatov, E. S., Stepanov, A. S.
Format: Article
Language:English
Subjects:
Electromigration
Forming
Hadrons
Heavy Ions
Nanowires
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the XIV National Seminar “Physics and Application of Microwaves”
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Description
Summary:A method for forming extremely small gaps (1–5 nm) in planar metallic nanowires for a new generation of nanoelectronic elements is developed using the electromigration effect. The dynamics of forming such gaps and their electrical characteristics are studied.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873814020117