Theory of phase transitions under pressure in Si, Ge semiconductors

The bulk modulus of rigidity of Si and Ge phases stable under low and high pressures and the respective pressures of phase transitions under pressure are found in frames of Fermi model in the first approximation. The results of the calculations are compared with the results obtained in frames of qua...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2011-12, Vol.75 (12), p.1676-1682
Main Authors: Gufan, A. Yu, Naskalova, O. V., Osipenko, I. A., Smolin, A. Yu
Format: Article
Language:English
Subjects:
Bulk modulus
Frames
Germanium
Hadrons
Heavy Ions
Nuclear Physics
Phase transitions
Physics
Physics and Astronomy
Proceedings of the XIII All-Russia Seminar “Physics and Application of Microwaves”
Quantum chemistry
Rigidity
Shear modulus
Silicon
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Summary:The bulk modulus of rigidity of Si and Ge phases stable under low and high pressures and the respective pressures of phase transitions under pressure are found in frames of Fermi model in the first approximation. The results of the calculations are compared with the results obtained in frames of quantum chemistry models.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873811110116