Accumulation nanolayer and surface states of ultrathin Cs, Ba/n-GaN interfaces

It is found that Cs and Ba ultrathin coatings induce formation of a charge accumulation layer (2D electron channel) on the n -GaN(0001) surface. Photoemission of conduction electrons from the accumulation layer under excitation by light in the range of GaN transparency is revealed. It is established...

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Published in:Bulletin of the Russian Academy of Sciences. Physics 2009-05, Vol.73 (5), p.670-672
Main Authors: Benemanskaya, G. V., Timoshnev, S. N., Frank-Kamenetskaya, G. E.
Format: Article
Language:English
Subjects:
Conduction electrons
Hadrons
Heavy Ions
Nuclear Physics
Photoelectric emission
Physics
Physics and Astronomy
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description It is found that Cs and Ba ultrathin coatings induce formation of a charge accumulation layer (2D electron channel) on the n -GaN(0001) surface. Photoemission of conduction electrons from the accumulation layer under excitation by light in the range of GaN transparency is revealed. It is established that the depth of the potential well of the accumulation layer can be deliberately controlled.
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subjects Conduction electrons
Hadrons
Heavy Ions
Nuclear Physics
Photoelectric emission
Physics
Physics and Astronomy
title Accumulation nanolayer and surface states of ultrathin Cs, Ba/n-GaN interfaces
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