Microneedle growth method as an innovative approach for growing freestanding single crystal diamond substrate: Detailed study on the growth scheme of continuous diamond layers on diamond microneedles

A detailed study of diamond growth on diamond microneedles was conducted using micro-Raman spectroscopy of the microneedle and coalescence regions to approach the production of freestanding diamond substrate by heteroepitaxy with the microneedle growth method. The high-density non-diamond-phase carb...

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Bibliographic Details
Published in:Diamond and related materials 2017-05, Vol.75, p.37
Main Authors: Aida, Hideo, Kim, Seong-Woo, Ikejiri, Kenjiro, Fujii, Daiki, Kawamata, Yuki, Koyama, Koji, Kodama, Hideyuki, Sawabe, Atsuhito
Format: Article
Language:English
Subjects:
Coalescing
Compressive properties
Contamination
Crystallinity
Diamonds
Dislocations
Needles
Raman spectroscopy
Scientific imaging
Single crystals
Stress state
Tensile stress
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Summary:A detailed study of diamond growth on diamond microneedles was conducted using micro-Raman spectroscopy of the microneedle and coalescence regions to approach the production of freestanding diamond substrate by heteroepitaxy with the microneedle growth method. The high-density non-diamond-phase carbon is contaminated in the initial stage of overgrowth of diamond on diamond microneedles, but this completely disappears through the quick recovery of the crystallinity of the overgrown diamond layers during the coalescence with the lateral direction growth. We also point out the possibility that a strong driving force is applied to the dislocations generated at the regrowth point and at the coalescence front to enhance the mutual annihilation of dislocations. In addition, we reveal that the stress state changes from compressive stress in the initial diamond layers to a nearly stress-free state in the bulk layers on the microneedles through a momentary tensile stress state at the regrowth point at the tip of the microneedle. Overall results indicate the strong feasibility of producing freestanding, stress-free, single-crystal diamond substrate by heteroepitaxy.
ISSN:0925-9635
1879-0062