Synthesis and enhanced field emission of zinc oxide incorporated carbon nanotubes

• Published in: Diamond and related materials 2017-01, Vol.71, p.79-84
• Main Authors: Kennedy, J., Fang, F., Futter, J., Leveneur, J., Murmu, P.P., Panin, G.N., Kang, T.W., Manikandan, E.
• Format: Article
• Language: English
• Subjects: Carbon; Carbon nanotube; Carbon nanotubes; Cathodoluminescence; Current density; Electric arcs; Electric vehicles; Emission spectroscopy; Field emission; Nanocomposites; Nanoparticles; Nanostructure; Nanotubes; Optical properties; Optical property; Photoelectron spectroscopy; Raman spectra; Raman spectroscopy; Synthesis; X-ray diffraction; Zinc oxide; Zinc oxides; ZnO nanoparticle
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2016.12.007

Zinc oxide (ZnO) nanostructures were successfully incorporated into carbon nanotubes (CNTs) using an arc discharge method. Studies of the morphologies of ZnO incorporated CNTs (ZnO-CNTs) revealed that ZnO nanoparticles were attached on the exterior of CNTs. X-ray diffraction, Raman spectra and cathodoluminescence (CL) spectra revealed the existence of ZnO. The ID/IG ratios from Raman spectroscopy for the CNTs and ZnO-CNTs were 0.44 and 0.51, respectively, suggesting an increased degree of disorder of the CNT walls after the incorporation of ZnO. The deep red CL emission peak at 747nm originated from ZnO defect emission in ZnO incorporated CNTs. X-ray photoelectron spectroscopy results revealed that sp3-hybridized CO bonds at 286.2eV in ZnO-CNTs had higher intensities than CNTs, indicating presence of more CO bonds in ZnO-CNTs. A low turn-on field of ~1.5Vμm−1 at a current density of 0.1μAcm−2, low threshold field of ~2.9Vμm−1 at a current density of 1mAcm−2, high field enhancement factor (5741), and stable emission current were obtained from ZnO-CNTs. The simplicity of synthesis, coupled with the promising emission results, make ZnO-CNTs a promising candidate for low-cost, compact CNT cold cathode materials. [Display omitted] •CNTs and ZnO incorporated CNTs (ZnO-CNTs) synthesis using arc-discharge method•Higher ID/IG ratio indicates higher disorder on CNT walls upon ZnO incorporation.•X-ray photoelectron spectroscopy revealed presence of more CO bonds in ZnO-CNTs.•Low turn-on field (~1.5Vμm−1) and high field enhancement factor (5741)