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An investigation on dielectric properties of diamond films in the range of K and Ka band
Low dielectric loss, high quality diamond films could be exploited as a promising dielectric material. On the other hand, dielectric properties of diamond films are markedly affected by deposition conditions. In this investigation, dielectric properties of diamond films were measured by using the sp...
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Published in: | Diamond and related materials 2017-03, Vol.73, p.114-120 |
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creator | Liu, Y.Q. Ding, M.H. Su, J.J. Ren, H. Lu, X.R. Tang, W.Z. |
description | Low dielectric loss, high quality diamond films could be exploited as a promising dielectric material. On the other hand, dielectric properties of diamond films are markedly affected by deposition conditions. In this investigation, dielectric properties of diamond films were measured by using the split-cylinder resonator method at two frequencies (~24 and 30GHz) in K and Ka band, and the influence of deposition parameters including substrate temperature, methane and nitrogen concentrations on dielectric properties of diamond films were investigated. Experimental results showed that while deposition conditions have little influence on dielectric permittivity, they have a vital influence on dielectric loss tangent value of the diamond films. In addition, results showed that diamond films with different qualities exhibited different frequency dependences in their dielectric loss property. By comparing dielectric loss tangent values measured at the two frequencies and characteristic Raman peak width of the diamond films, it is suggested that diamond films with large Raman peak width have high degree of lattice disorder, which will result in an increase in dielectric loss of the material, due to one-phonon excitation of acoustic vibrations or Rayleigh scatterings to microwaves.
[Display omitted]
•Effect of deposition parameters on dielectric property of diamond films was studied.•Correlation between dielectric loss and quality of diamond films was analyzed.•Frequency dependence of dielectric loss is shown related to diamond films quality.•High degree of lattice disorder leads to increase in dielectric loss of diamond film. |
doi_str_mv | 10.1016/j.diamond.2016.08.007 |
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[Display omitted]
•Effect of deposition parameters on dielectric property of diamond films was studied.•Correlation between dielectric loss and quality of diamond films was analyzed.•Frequency dependence of dielectric loss is shown related to diamond films quality.•High degree of lattice disorder leads to increase in dielectric loss of diamond film.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2016.08.007</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Cylinders ; Deposition ; Diamond films ; Diamonds ; Dielectric loss ; Dielectric properties ; Frequency dependence ; Methane ; Microwave dielectric properties ; Microwaves ; Permittivity ; Raman FWHM ; Temperature ; Thin films</subject><ispartof>Diamond and related materials, 2017-03, Vol.73, p.114-120</ispartof><rights>2016 Elsevier B.V.</rights><rights>Copyright Elsevier BV Mar 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-800c48b787fe91462295e7f66a003a8b4ccf9e8fa6288b04d512786668fc55073</citedby><cites>FETCH-LOGICAL-c337t-800c48b787fe91462295e7f66a003a8b4ccf9e8fa6288b04d512786668fc55073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Liu, Y.Q.</creatorcontrib><creatorcontrib>Ding, M.H.</creatorcontrib><creatorcontrib>Su, J.J.</creatorcontrib><creatorcontrib>Ren, H.</creatorcontrib><creatorcontrib>Lu, X.R.</creatorcontrib><creatorcontrib>Tang, W.Z.</creatorcontrib><title>An investigation on dielectric properties of diamond films in the range of K and Ka band</title><title>Diamond and related materials</title><description>Low dielectric loss, high quality diamond films could be exploited as a promising dielectric material. On the other hand, dielectric properties of diamond films are markedly affected by deposition conditions. In this investigation, dielectric properties of diamond films were measured by using the split-cylinder resonator method at two frequencies (~24 and 30GHz) in K and Ka band, and the influence of deposition parameters including substrate temperature, methane and nitrogen concentrations on dielectric properties of diamond films were investigated. Experimental results showed that while deposition conditions have little influence on dielectric permittivity, they have a vital influence on dielectric loss tangent value of the diamond films. In addition, results showed that diamond films with different qualities exhibited different frequency dependences in their dielectric loss property. By comparing dielectric loss tangent values measured at the two frequencies and characteristic Raman peak width of the diamond films, it is suggested that diamond films with large Raman peak width have high degree of lattice disorder, which will result in an increase in dielectric loss of the material, due to one-phonon excitation of acoustic vibrations or Rayleigh scatterings to microwaves.
[Display omitted]
•Effect of deposition parameters on dielectric property of diamond films was studied.•Correlation between dielectric loss and quality of diamond films was analyzed.•Frequency dependence of dielectric loss is shown related to diamond films quality.•High degree of lattice disorder leads to increase in dielectric loss of diamond film.</description><subject>Cylinders</subject><subject>Deposition</subject><subject>Diamond films</subject><subject>Diamonds</subject><subject>Dielectric loss</subject><subject>Dielectric properties</subject><subject>Frequency dependence</subject><subject>Methane</subject><subject>Microwave dielectric properties</subject><subject>Microwaves</subject><subject>Permittivity</subject><subject>Raman FWHM</subject><subject>Temperature</subject><subject>Thin films</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFUE1LAzEQDaJgrf4EIeB510l2N8mepBS_aMGLgreQzU5qlna3JtuC_97U9i4MDMObeW_eI-SWQc6Aifsub73ZDH2b8zTmoHIAeUYmTMk6AxD8nEyg5lVWi6K6JFcxdgCM1yWbkM9ZT32_xzj6lRn90NNUrcc12jF4S7dh2GIYPUY6OHrSoc6vNzHd0fELaTD9Cg_ogpqELQxtUr8mF86sI96c-pR8PD2-z1-y5dvz63y2zGxRyDFTALZUjVTSYc1KwXldoXRCGIDCqKa01tWonBFcqQbKtmJcKiGEcraqQBZTcnfkTZ9-75IP3Q270CdJzeqCM1Ew4GmrOm7ZMMQY0Olt8BsTfjQDfQhRd_pkTh9C1KA0_LE_HO8wWdh7DDpaj73F1oeUkG4H_w_DL4E_e94</recordid><startdate>201703</startdate><enddate>201703</enddate><creator>Liu, Y.Q.</creator><creator>Ding, M.H.</creator><creator>Su, J.J.</creator><creator>Ren, H.</creator><creator>Lu, X.R.</creator><creator>Tang, W.Z.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>201703</creationdate><title>An investigation on dielectric properties of diamond films in the range of K and Ka band</title><author>Liu, Y.Q. ; Ding, M.H. ; Su, J.J. ; Ren, H. ; Lu, X.R. ; Tang, W.Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-800c48b787fe91462295e7f66a003a8b4ccf9e8fa6288b04d512786668fc55073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Cylinders</topic><topic>Deposition</topic><topic>Diamond films</topic><topic>Diamonds</topic><topic>Dielectric loss</topic><topic>Dielectric properties</topic><topic>Frequency dependence</topic><topic>Methane</topic><topic>Microwave dielectric properties</topic><topic>Microwaves</topic><topic>Permittivity</topic><topic>Raman FWHM</topic><topic>Temperature</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Y.Q.</creatorcontrib><creatorcontrib>Ding, M.H.</creatorcontrib><creatorcontrib>Su, J.J.</creatorcontrib><creatorcontrib>Ren, H.</creatorcontrib><creatorcontrib>Lu, X.R.</creatorcontrib><creatorcontrib>Tang, W.Z.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Y.Q.</au><au>Ding, M.H.</au><au>Su, J.J.</au><au>Ren, H.</au><au>Lu, X.R.</au><au>Tang, W.Z.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An investigation on dielectric properties of diamond films in the range of K and Ka band</atitle><jtitle>Diamond and related materials</jtitle><date>2017-03</date><risdate>2017</risdate><volume>73</volume><spage>114</spage><epage>120</epage><pages>114-120</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>Low dielectric loss, high quality diamond films could be exploited as a promising dielectric material. On the other hand, dielectric properties of diamond films are markedly affected by deposition conditions. In this investigation, dielectric properties of diamond films were measured by using the split-cylinder resonator method at two frequencies (~24 and 30GHz) in K and Ka band, and the influence of deposition parameters including substrate temperature, methane and nitrogen concentrations on dielectric properties of diamond films were investigated. Experimental results showed that while deposition conditions have little influence on dielectric permittivity, they have a vital influence on dielectric loss tangent value of the diamond films. In addition, results showed that diamond films with different qualities exhibited different frequency dependences in their dielectric loss property. By comparing dielectric loss tangent values measured at the two frequencies and characteristic Raman peak width of the diamond films, it is suggested that diamond films with large Raman peak width have high degree of lattice disorder, which will result in an increase in dielectric loss of the material, due to one-phonon excitation of acoustic vibrations or Rayleigh scatterings to microwaves.
[Display omitted]
•Effect of deposition parameters on dielectric property of diamond films was studied.•Correlation between dielectric loss and quality of diamond films was analyzed.•Frequency dependence of dielectric loss is shown related to diamond films quality.•High degree of lattice disorder leads to increase in dielectric loss of diamond film.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2016.08.007</doi><tpages>7</tpages></addata></record> |
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subjects | Cylinders Deposition Diamond films Diamonds Dielectric loss Dielectric properties Frequency dependence Methane Microwave dielectric properties Microwaves Permittivity Raman FWHM Temperature Thin films |
title | An investigation on dielectric properties of diamond films in the range of K and Ka band |
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