Growth of P-type 4H–SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping

• Published in: Journal of crystal growth 2017-07, Vol.470, p.154-158
• Main Authors: Eto, Kazuma, Suo, Hiromasa, Kato, Tomohisa, Okumura, Hajime
• Format: Article
• Language: English
• Subjects: A1. Doping; A2. Growth from vapor; A2. Single-crystal growth; Aluminum; B2. Semiconducting silicon compounds; Crystal growth; Crystals; Doping; Mass spectrometry; Nitrogen; Polytypes; Raman spectroscopy; Silicon carbide; Single crystals; Transport
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2017.04.025

•Highly p-type doped 4H-SiC crystals were grown by physical vapor transport.•Al-N co-doping is useful to stabilize the 4H-SiC polytype on highly p-type growth.•4H-SiC crystals grown with using Al-N co-doping show low resistivity of 86mΩcm.•3″ highly p-type 4H-SiC crystal growth was performed with using Al-N co-doping. P-type 4H–silicon carbide (SiC) crystal growth has been achieved by physical vapor transport using aluminum and nitrogen co-doping. Aluminum carbide with a two-zone heating furnace was used for p-type doping, and yielded homogenous aluminum doping during SiC crystal growth by physical vapor transport. The 4H–SiC polytype with high-aluminum doping was unstable, but aluminum–nitrogen co-doping improved its stability. We grew p-type 4H–SiC bulk crystals of less than 90mΩcm by using co-doping. Secondary-ion mass spectrometry and Raman spectroscopy showed that the crystal growth of highly doped p-type SiC can be achieved by using the physical vapor transport method.