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Copper iodide synthesized by iodization of Cu-films and deposited using MOCVD
•MOCVD of CuI using CpCuPEt3 and C2H5I is studied.•Reaction behavior of copper films with C2H5I is examined.•X-ray measurements revealed polycrystalline CuI with zincblende type structure.•Photoluminescence measurements of MOCVD samples reveal an intensive bound exciton emission. We report the thin...
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Published in: | Journal of crystal growth 2017-08, Vol.471, p.21-28 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •MOCVD of CuI using CpCuPEt3 and C2H5I is studied.•Reaction behavior of copper films with C2H5I is examined.•X-ray measurements revealed polycrystalline CuI with zincblende type structure.•Photoluminescence measurements of MOCVD samples reveal an intensive bound exciton emission.
We report the thin film deposition of copper iodide with zincblende type structure (γ-CuI) via metal-organic chemical vapor deposition (MOCVD). Single crystals and thin films of Cu and γ-CuI could be formed on various substrates from cyclopentadienylcopper triethylphosphine (CpCuPEt3) and ethyliodide (C2H5I) as precursors for copper and iodine, respectively. Additionally, the chemical reaction behavior of thermally evaporated and MOCVD deposited elemental copper films with C2H5I is examined. SiO2 glass and various single crystalline oxides and semiconductors were used as substrates. For all cases X-ray diffraction measurements revealed polycrystalline γ-CuI with zincblende type structure; other CuI phases could not be detected. Photoluminescence measurements show a broadened peak at 420nm due to donor-acceptor pair recombination. Intense peaks at shorter wavelengths are attributed to excitonic emissions. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2017.04.033 |