Near ultraviolet light emitting diodes using ZnMgO:N/ZnO hetero-junction grown by MOVPE

A ZnMgO:N/ZnO/ZnO:Ga single hetero-junction light emitting diode structure on Al2O3 (112̅0) substrate was fabricated by metalorganic vapor phase epitaxy. By using ZnMgO:N as a substitute for a ZnO:N top layer of a homojunction LED, improved rectifying current−voltage characteristics were obtained. A...

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Bibliographic Details
Published in:Journal of crystal growth 2017-04, Vol.464, p.226-230
Main Authors: Fujita, Yasuhisa, Yanase, Shogo, Nishikori, Hirokazu, Hiragino, Yuto, Furubayashi, Yutaka, Lin, Jie, Yoshida, Toshiyuki
Format: Article
Language:English
Subjects:
A1: Doping
A3. Metalorganic chemical vapor deposition
Aluminum oxide
B1: Oxides
B2: Semiconducting II-VI materials
B3: Light emitting diodes
Chemical bonds
Current voltage characteristics
Electroluminescence
Homojunctions
Light emitting diodes
Metalorganic chemical vapor deposition
Organic light emitting diodes
Semiconductor doping
Temperature
Ultraviolet radiation
Zinc oxide
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Summary:A ZnMgO:N/ZnO/ZnO:Ga single hetero-junction light emitting diode structure on Al2O3 (112̅0) substrate was fabricated by metalorganic vapor phase epitaxy. By using ZnMgO:N as a substitute for a ZnO:N top layer of a homojunction LED, improved rectifying current−voltage characteristics were obtained. Although the device had a heating problem and the luminescent area was partly in the ZnMgO:N layer, a sharp ultraviolet electroluminescence emission at 3.17eV was successfully observed at room temperature. •A ZnMgO/ZnO single hetero-junction light emitting diode structure was grown by MOVPE.•A sharp, near UV band edge emission was successfully observed at room temperature.•The inhomogeneity of the UV-EL emission indicated that p-type island structure existed in the ZnMgO:N layer.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2016.10.085