A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface

We report here the temperature-dependent incorporation kinetics of dimeric arsenic in InAs(001) homoepitaxy, using reflection high-energy electron diffraction (RHEED). Surface reconstructions, in combination with the RHEED investigation have provided insight into the growth of InAs(001), developing...

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Bibliographic Details
Published in:Journal of crystal growth 2017-02, Vol.459, p.118-123
Main Authors: Bomphrey, J.J., Ashwin, M.J., Jones, T.S.
Format: Article
Language:English
Subjects:
Arsenic
Arsenides
Crystals
Electron diffraction
Energy consumption
Epitaxial growth
Epitaxial layers
Indium
Indium arsenides
Intermetallic compounds
Molecular beam epitaxy
Reflection high energy electron diffraction
Semiconducting III-V materials
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Summary:We report here the temperature-dependent incorporation kinetics of dimeric arsenic in InAs(001) homoepitaxy, using reflection high-energy electron diffraction (RHEED). Surface reconstructions, in combination with the RHEED investigation have provided insight into the growth of InAs(001), developing an accurate method of controlling the V:III ratio, which has been utilised to probe the low temperature epitaxial growth of indium arsenide epitaxial layers. •We demonstrate a method of controlling III:V ratio across a range of temperatures.•We give a value for As2 desorption from InAs(001) surface.•We demonstrate low temperature growth of good quality InAs(001).
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2016.10.050