Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Fe-doping of GaN layers of 3in. in diameter and a thickness of 1mm in a vertical AIX-HVPE reactor is studied. Ferrocen was used as Fe source. It is shown that a sufficient uniformity of growth conditions, a high purity of undoped GaN layers, and a moderate Fe incorporation of 2×1018cm−3 allow for gr...

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Bibliographic Details
Published in:Journal of crystal growth 2016-12, Vol.456, p.97-100
Main Authors: Richter, E., Gridneva, E., Weyers, M., Tränkle, G.
Format: Article
Language:English
Subjects:
A1. Doping
A2. Growth from vapor
A3. Hydride vapor phase epitaxy
B2. Semiconducting gallium compounds
B2. Semiconducting III–V materials
Doping
Electronic devices
Gallium nitrides
High temperature
Reactors
Substrates
Temperature
Vapor phase epitaxy
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Summary:Fe-doping of GaN layers of 3in. in diameter and a thickness of 1mm in a vertical AIX-HVPE reactor is studied. Ferrocen was used as Fe source. It is shown that a sufficient uniformity of growth conditions, a high purity of undoped GaN layers, and a moderate Fe incorporation of 2×1018cm−3 allow for growth of semi-insulating GaN layers with a sufficiently high specific resistivity even at elevated temperature. This makes the material suitable as substrate for electronic power devices at high power or in harsh ambient. •HVPE, 3in. layers with high uniformity, low parasitic deposits.•Fe-Doping with ferrocen.•Semi-insulating GaN at high temperatures.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2016.05.016